Improved Step-Graded-Channel Heterostructure Field-Effect Transistor
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概要
- 論文の詳細を見る
A heterostructure field-effect transistor with a step-graded channel has been successfully fabricated. The conduction electrons are distant from the AlGaAs/InGaAs interface; thus the Coulomb scattering is reduced, and consequently, electron mobility is increased. A high drain-current density and a large gate-voltage swing can be obtained. For a $1.2\times 100$ μm2 gate, the maximum saturation drain-current density is 373 mA/mm and the maximum extrinsic transconductance is 148 mS/mm with a gate-voltage swing of 1.9 V.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-09-15
著者
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Li Yih-juan
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Chen Yeong-jia
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Yu Shu-jenn
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Hsu Wei-chou
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Hsu Wei-Chou
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan, R.O.C.
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Li Yih-Juan
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan, R.O.C.
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Yu Shu-Jenn
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan, R.O.C.
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Chen Yeong-Jia
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan, R.O.C.
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