Off-State Breakdown Modeling for High-Schottky-Barrier $\delta$-Doped In0.49Ga0.51P/In0.25Ga0.75As/InP High Electron Mobility Transistor
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概要
- 論文の詳細を見る
An off-state two-terminal gate-drain current model has been proposed to investigate the breakdown phenomenon for $\delta$-doped high electron mobility transistors ($\delta$-HEMTs) with a high Schottky barrier. The proposed model is based on the integrated mechanisms of thermionic-field emission theory for gate-barrier tunneling and impact ionization multiplication within the channel regime by self-consistently solving the 2-D Poisson equation. Explicit mathematical expressions have been derived to provide an efficient estimation of breakdown criteria and illustrations of sophisticated breakdown characteristics. Calculations of breakdown criteria for $\delta$-HEMTs with a high Schottky barrier, including Au/In0.49Ga0.51P and Au/In0.34Al0.66As0.85Sb0.15, have also been verified and discussed. This model is suitable for the implementation of computer-aided design (CAD) design tools.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
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Hsu Wei-chou
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Lee Ching-sung
Department Of Electrical Engineering National Cheng Kung University
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Hsu Wei-Chou
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan, Republic of China
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Lee Ching-Sung
Department of Electronic Engineering, Feng Chia University, 100 Wenhwa Road, Seatwen, Taichung, Taiwan, Republic of China
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