A Four-Terminal GaAs Multiple-Function Transistor with a Buried Silicon-Doping Quantum Well

概要

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A four-terminal MESFET-like GaAs multiple-function transistor (MFT) with a buried silicon-doping quantum well has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The vertical GaAs negative resistance field-effect transistor (NERFET) based on real-space transfer exhibits a high current driving capability, a high peak-to-valley ratio up to 2160, and a high transconductance of 2.1 S /mm at room temperature. In addition, we carried out an ohmic recess to form nonallyed contacts which are electrically isolated from ohmic electrodes. By virtue of nonalloyed ohmic contacts, a planar metal-semiconductor field-effect transistor (MESFET) has been fabricated on the same wafer successfully. The MESFET with a 2×100 μm^2 gate exhibits a maximum extrinsic transconductance of 70 mS/mm, a saturation current density of 172 mA/mm, and a Schottky breakdown voltage larger than 15 V at room temperature.
社団法人応用物理学会の論文
1994-10-01