Enhanced Two-Dimensional Electron Gas Concentrations and Mobilities in Multiple δ-Doped GaAs/In_<0.25>Ga_<0.75>As/GaAs Pseudomorphic Heterostructures
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-04-15
著者
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KAO Ming-Jer
Department of Electrical Engineering, National Cheng Kung University
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Wu Yue-huei
Department Of Electrical Engineering National Cheng Kung University
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Kao M‐j
National Cheng Kung Univ. Tainan Twn
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Kao Ming-jer
Department Of Electrical Engineering National Cheng Kung University
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Shieh H‐m
Kung‐shan Inst. Technol. Tainan Twn
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SHIEH Hir-Ming
Department of Electronic Engineering, Kung-Shan Institute of Technology
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HSU Web-Chou
Department of Electrical Engineering, National Cheng-Kung University
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WU Chang-Luen
Department of Electrical Engineering, National Cheng Kung University
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Wu C‐l
Transcom Inc.
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Wu Chang-luen
Department Of Electrical Engineering National Cheng-kung Universiry
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Shieh Hir-ming
Department Of Electrical Engineering National Cheng Kung University
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Hsu Web-chou
Department Of Electrical Engineering National Cheng Kung University
関連論文
- Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor
- High-Temperature Breakdown Characteristics of δ-Doped In_Ga_P/GaAs/In_Ga_As/AlGaAs High Electron Mobility Transistor
- Application of Doping-Superlattice Collector Structure for GaAs Bipolar Transistor
- Enhanced Two-Dimensional Electron Gas Concentrations and Mobilities in Multiple δ-Doped GaAs/In_Ga_As/GaAs Pseudomorphic Heterostructures
- A Four-Terminal GaAs Multiple-Function Transistor with a Buried Silicon-Doping Quantum Well
- Improved Selectively δ-Doped GaAs/InGaAs Double-Quantum-Well Pseudomorphic HFET's Utilizing a Buried P-Layer on the Buffer
- Novel In_Al_As/In_xGa_As Metamorphic δ-HEMT's on GaAs Substrate with Various Channel Designs
- Analytic Modeling for Drain-Induced Barrier Lowering Phenomenon of the InGaP/InGaAs/GaAs Pseudomorphic Doped-Channel Field-Effect Transistor