Improved Selectively δ-Doped GaAs/InGaAs Double-Quantum-Well Pseudomorphic HFET's Utilizing a Buried P-Layer on the Buffer

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概要

• 論文の詳細を見る

• This letter demonstrates a new double-quantum-well (DQW) selectively δ-doped GaAs/InGaAs HFET'S utilizing a buried lightly doped p-layer on the GaAs buffer prepared by low-pressure metalorganic chemical vapor deposition (MOCVD). Pinch-off characteristic and transconductance the remarkably improved in the DQW HFET's by using a buried p-layer. The extrinsic transconductances of the DQW HFET's with and without the buried p-layer are 240 mS/mm and 190 mS/mm, respectively.

• 社団法人応用物理学会の論文
• 1993-10-15

著者

• HSU Wei-Chou

  Department of Electrical Engineering, National Cheng-Kung University

• Hsu Wei-chou

  Department Of Electrical Engineering National Cheng Kung University

• KAO Ming-Jer

  Department of Electrical Engineering, National Cheng Kung University

• Kao Ming-jer

  Department Of Electrical Engineering National Cheng Kung University

• SHIEH Hir-Ming

  Department of Electronic Engineering, Kung-Shan Institute of Technology

• Shieh Hir-ming

  Department Of Electrical Engineering National Cheng Kung University

• Hsu Wei-Chou

  Department of Electrical Engineering, National Cheng Kung University

関連論文

• Regenerative Switching Phenomenon of a GaAs Metal-n-δ(p^+)-n-n^+ Structure
• Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor
• Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• High-Temperature Breakdown Characteristics of δ-Doped In_Ga_P/GaAs/In_Ga_As/AlGaAs High Electron Mobility Transistor
• An Improved In_Ga_P/GaAs Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
• A Study of Layer Thickness and Interface Qualities of Strained ln_xGa_As/GaAs Layers
• Enhanced Two-Dimensional Electron Gas Concentrations and Mobilities in Multiple δ-Doped GaAs/In_Ga_As/GaAs Pseudomorphic Heterostructures
• A Four-Terminal GaAs Multiple-Function Transistor with a Buried Silicon-Doping Quantum Well
• Improved Selectively δ-Doped GaAs/InGaAs Double-Quantum-Well Pseudomorphic HFET's Utilizing a Buried P-Layer on the Buffer

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