Wu C‐l | Transcom Inc.
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概要
関連著者
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Wu C‐l
Transcom Inc.
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Lee C‐s
Genitech Co. Ltd. Daejon Kor
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Lee Ching-sung
Department Of Electronic Engineering Feng Chia University
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Hsu W‐c
National Cheng‐kung Univ. Tainan Twn
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Hsu Wei-chou
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Hsu Wei-cheng
Materials Research Laboratory
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WU Chang-Luen
Transcom, Inc.
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Hsu Wei-chou
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Lee Ching-sung
Department Of Electrical Engineering National Cheng Kung University
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KAO Ming-Jer
Department of Electrical Engineering, National Cheng Kung University
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Wu Yue-huei
Department Of Electrical Engineering National Cheng Kung University
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Kao M‐j
National Cheng Kung Univ. Tainan Twn
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Kao Ming-jer
Department Of Electrical Engineering National Cheng Kung University
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Shieh H‐m
Kung‐shan Inst. Technol. Tainan Twn
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SHIEH Hir-Ming
Department of Electronic Engineering, Kung-Shan Institute of Technology
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HUANG Jun-Chin
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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CHEN Yeong-Jia
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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Chen Yeong-jia
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Huang Jun-chin
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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HSU Web-Chou
Department of Electrical Engineering, National Cheng-Kung University
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WU Chang-Luen
Department of Electrical Engineering, National Cheng Kung University
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Wu Chang-luen
Department Of Electrical Engineering National Cheng-kung Universiry
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Shieh Hir-ming
Department Of Electrical Engineering National Cheng Kung University
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Hsu Web-chou
Department Of Electrical Engineering National Cheng Kung University
著作論文
- Enhanced Two-Dimensional Electron Gas Concentrations and Mobilities in Multiple δ-Doped GaAs/In_Ga_As/GaAs Pseudomorphic Heterostructures
- Novel In_Al_As/In_xGa_As Metamorphic δ-HEMT's on GaAs Substrate with Various Channel Designs
- Analytic Modeling for Drain-Induced Barrier Lowering Phenomenon of the InGaP/InGaAs/GaAs Pseudomorphic Doped-Channel Field-Effect Transistor