S-Shaped Negative Differential Resistance in a Single GaAs Quantum-Well Switching Device
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概要
- 論文の詳細を見る
A new GaAs-AlGaAs switching device with planar-doped barriers and a GaAs quantum well grown by molecular beam epitaxy and exhibiting S-shaped negative differential resistance (NDR) has been fabricated. The NDR phenomenon is attributed mainly to impact ionization within the undoped collector region. Furthermore, the studied NDR properties are very sensitive to the environmental temperature.
- 社団法人応用物理学会の論文
- 1990-08-20
著者
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Liu Wen-chau
Department Of Electrical Engineering National Cheng Kung University
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Lour Wen-shiung
Department Of Electrical Engineering National Cheng Kung University
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Sun Chung-yih
Department Of Electrical Engineering National Cheng Kung University
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LIN Ching-Hsi
Department of Electrical Engineering, National Cheng Kung University
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Lin Ching-hsi
Department Of Electrical Engineering National Cheng Kung University
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