Comparison of GaAs, InGaAs, and GaAs/InGaAs Doped Channel Field-Effect Transistors with AlGaAs Insulator Gate
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概要
- 論文の詳細を見る
Heterojunction field-effect transistors (HFET's) with a GaAs, an InGaAs, and a GaAs/InGaAs doped channel have been fabricated and compared. The HFET's with an InGaAs doped channel show better performance than that of HFET's with a GaAs doped channel. Another device with a high-low double GaAs/InGaAs doped channel exhibits a much higher breakdown voltage. The parallel conduction and transconductance suppression could be avoided in the doped-channel FET's. All devices display broad plateaus on their transconductance vs. gate-to-source voltage profiles through a large voltage swing. For 1.5 × 100 μm^2 devices, the measured extrinsic transconductances (breakdown voltages) are 130 (15), 152 (17), and 184 (25) mS/mm (V) for a GaAs, an InGaAs, and a GaAs/InGaAs double strained doped channel FET's, respectively.
- 社団法人応用物理学会の論文
- 1996-12-15
著者
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Lour W‐s
National Taiwan Ocean Univ. Keelung Twn
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Lour Wen-shiung
Department Of Electrical Engineering National Cheng Kung University
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