Electronic Transport Characteristics in GaAs Double-Sawtooth-Doping Superlattice Structure

概要

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In this paper, a new GaAs switching device, based on a double-sawtooth-doping superlattice (SDS) structure and a metal-semiconductor (M-S) Schottky contact, has been demonstrated. The distinct δ-doping sheets, i. e., 1×10^<12> and 1×10^<13> cm^<-2>, were employed in the double-SDS structure. Holes, created by the avalanche breakdown process at the M-S junction, cause the potential redistribution when they are accumulated at the valence band maxima of zigzag quantum wells. Hence, an attractive S-shaped negative-differential-resistance (NDR) phenomenon is observed. In addition, an interesting intermediate state between the initial off-state and the final on-state appears at 77 K. Consequently, with appropriately designed parameters, the studied structure will provide a good potential for application in switching and multiple-valued logic circuits.
社団法人応用物理学会の論文
1991-08-15