New Field-Effect Resistive Pd/Oxide/AlGaAs Hydrogen Sensor Based on Pseudomorphic High Electron Mobility Transistor

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文

著者

• Hung Ching‐wen

  Department Of Chemical Engineering National Cheng-kung University

• Chen Huey‐ing

  National Cheng‐kung Univ. Tainan Twn

関連論文

• New Field-Effect Resistive Pd/Oxide/AlGaAs Hydrogen Sensor Based on Pseudomorphic High Electron Mobility Transistor
• AlGaAs/InGaAs/GaAs Transistor-Based Hydrogen Sensing Device Grown by Metal Organic Chemical Vapor Deposition
• Hydrogen Sensing Characteristics of a Pd/AlGaN/GaN Schottky Diode
• Hydrogen-Sensing Behaviors of an InAlAs-Based Schottky Diode with a Pt Catalytic Thin Film
• Comparative Hydrogen-Sensing Study of Pd/GaAs and Pd/InP Metal-Oxide-Semiconductor Schottky DiodeS : Semiconductors
• On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors
• Characteristics of a New Resistive-Type Hydrogen Sensor

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