Epitaxial ZnO Thin Films on $a$-Plane Sapphire Substrates Grown by Ultrasonic Spray-Assisted Mist Chemical Vapor Deposition
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概要
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High-quality epitaxial ZnO thin films were grown by an ultrasonic spray-assisted mist chemical vapor deposition (CVD) on a-plane sapphire substrates with ZnO buffer layers. The ZnO thin films were grown with $c$-axis orientation without notable rotational domains. Surface morphologies and electrical properties were markedly improved as an effect of the ZnO buffer layers. The mobility in the ZnO epitaxial (main) layer was estimated to be 90 cm2/(V$\cdot$s), which is reasonably high compared with those in ZnO layers grown by CVD processes. Photoluminescence at a low temperature (4.5 K) revealed a free A-exiton peak, and that at room temperature showed a strong band-edge peak with little deep-level luminescence.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-12-25
著者
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Fujita Shizuo
Photonics And Electronics Science And Engineering Center Kyoto University
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Kameyama Naoki
Department Of Systems Engineering Nagoya Institute Of Technology
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Kamada Yudai
Department of Electronic Science and Engineering, Kyoto University, 1 Kyodai-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
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Nishinaka Hiroyuki
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
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Nishinaka Hiroyuki
Department of Electronic Science and Engineering, Kyoto University, 1 Kyodai-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
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Kameyama Naoki
Department of Electronic Science and Engineering, Kyoto University, 1 Kyodai-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
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