Effects of Annealing on Photoluminescence of ZnO Thin Film Prepared by Vapor Phase Growth

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概要

• 論文の詳細を見る

• In this study, we investigated the effects of annealing on the UV photoluminescence of ZnO films deposited on (0001) sapphire substrates by vapor phase growth. Before annealing, bound exciton lines dominate the band-edge emission at low excitation densities. However, at high excitation densities, free A- and B-exciton emissions are observed due to the saturation of bound exciton emissions. Annealing at 700°C in an oxygen atmosphere greatly affects the band-edge emissions. The free exciton emissions are significantly enhanced and become dominant, while the bound exciton emissions decrease notably after annealing. In addition, two emissions located at 3.306 and 3.220 eV are observed in the as-grown ZnO films. These are likely to be due to a donor–acceptor pair recombination and a localized exciton.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-02-15

著者

• Fujita Toshiaki

  Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University

• Chen Ji

  Department Of Applied Physics Graduate School Of Engineering Hiroshima University

• Fujita Toshiaki

  Department of Applied Physics, Graduate School of Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan

• Chen Ji

  Department of Applied Physics, Graduate School of Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan

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