Photoluminescence from ZnO Thin Films Prepared by Vapor Phase Growth
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概要
- 論文の詳細を見る
Photoluminescence from ZnO thin films deposited on (0001) sapphire substrates by vapor phase growth using a zinc acetate precursor under four different conditions is studied at 9 K and at room temperature. All the films exhibit an intense band-edge emission and extremely weak deep-level emission at 9 K. Clear free-exciton emission is observed at 9 K even at an excitation density as low as 20 W/cm2 on the films annealed at 700°C at atmospheric oxygen pressure. At room temperature, the integrated intensity ratio of deep-level emission to band-edge emission varies from 1/20 to 1.5 depending on growth conditions. Stimulated emissions due to exciton-exciton scattering and electron-hole plasma are observed at room temperature.
- Japan Society of Applied Physicsの論文
- 2003-07-15
著者
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Fujita Toshiaki
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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Fujita Toshiaki
Department Of Applied Physics Graduate School Of Engineering Hiroshima University
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Chen Ji
Department Of Applied Physics Graduate School Of Engineering Hiroshima University
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Kawaguchi Daigo
Department of Applied Physics, Graduate School of Engineering, Hiroshima University, 1-4-1 Kagamiyam
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Kawaguchi Daigo
Department Of Applied Physics Graduate School Of Engineering Hiroshima University
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