Effect of Pb_<1.1>(Al_<1/2>Nb_<1/2>)O_3 on Structure and Electrical Properties of Lead Titanate Thin Films Prepared by Chemical Solution Deposition Process(Electrical Properties of Condensed Matter)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-01-15
著者
-
YAMASHITA Yohachi
Power Supply Materials and Devices Research Laboratories, Research and Development Center, Toshiba C
-
Zhang B‐p
Tohoku Univ. Sendai Jpn
-
Zhang B‐p
Tohoku National Industrial Research Institute Aist Miti:(present Address)institute For Materials Res
-
Iijima T
Smart Structure Research Center Aist
-
Iijima Takashi
Smart Structure Research Center National Institute Of Advanced Industrial Science And Technology (ai
-
Iijima Takashi
Materials Engineering Division Tohoku National Industrial Research Institute
-
Iijima Takashi
Tohoku National Industrial Research Institute Aist Miti
-
Yoshida Yoichi
The Institute Of Scientific And Industrial Research Osaka University
-
Yamada Yasusada
Advanced Research Institute Waseda University:advanced Science Research Center Japan Atomic Energy R
-
Yamashita Y
Power Supply Materials And Devices Laboratory Corporate R&d Center Toshiba Corporation
-
Yamashita Yohachi
Corporate R&d Center Toshiba Corporation
-
Yamashita Yohachi
Power Supply Materials And Devices Laboratory Corporate R&d Center Toshiba Corporation
-
Yamashita Yohachi
Toshiba Materials & Devices Research Laboratories
-
Yamashita Yoshio
Sortec Corporation:(present Address) Oki Electric Industry Co. Ltd.
-
Yamashita Yasuharu
Synthetic Crystal Research Laboratory School Of Engineering Nagoya University
-
Iijima Takashi
Smart Structure Research Center Aist
-
Zhang Bo-ping
Tohoku National Industrial Research Institute Aist Miti
-
Yamashita Y
Central Research Laboratory Hamamatsu Photonics K.k.
-
Iijima Takashi
Tohoku National Industrial Research Institute
-
Yamashita Yoshio
Department Of Physics Tokai University
-
Yamashita Yohachi
Power Supply Materials & Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
関連論文
- 22pTJ-15 アト秒電子バンチの集団的エネルギー損失のシミュレーション(22pTJ 領域2,ビーム物理領域合同(レーザープラズマ加速・高エネルギー密度プラズマ物理),領域2(プラズマ基礎・プラズマ科学・核融合プラズマ・プラズマ宇宙物理))
- 22pTJ-15 アト秒電子バンチの集団的エネルギー損失のシミュレーション(22pTJ 領域2,ビーム物理領域合同(レーザープラズマ加速・高エネルギー密度プラズマ物理),ビーム物理領域)
- 23aZL-8 医療応用を目指したフォトカソード電子銃における電子ビームの光変調(ビームダイナミクス,ビーム源,ビーム物理領域)
- 28pSH-6 フォトニック結晶による可視域放射光の発生
- 27p-H-11 連続電子パンチによるプラズマウェーク場の蓄積効果
- 27p-H-10 東大電子ライナックにおけるプラズマレンズ実験
- 29a-PS-149 レーザーフォトカソードRF電子銃の製作と性能試験
- Experimental Studies of Transverse and Longitudinal Beam Dynamics in Photoinjector
- Subpicosecond Pulse Radiolysis Study of Geminate Ion Recombination in Liquid Benzene
- Nanowire Formation and Selective Adhesion on Substrates by Single-Ion Track Reaction in Polysilanes
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (II) : Relation between Resist Space Resolution and Space Distribution of Ionic Species
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (I) : Development of Subpicosecond Pulse Radiolysis and Relation between Space Resolution and Radiation-Induced Reactions
- Pulse Radiolysis Studies on Radiation Damage of DNA
- パルスラジオリシス法によるユウロピウム(III)-アミノポリカルボン酸錯体の酸化還元反応の研究
- Photo-Induced Reaction Dynamics in Poly (di-n-hexylsilylene) by Excimer Laser Flash Photolysis
- 6p-YC-3 有機凝縮系のパルスラジオリシス : ジェミネートイオン再結合過程
- Positive-Negative Inversion of Silicon Based Resist Materials:Poly(di-n-hexylsilane)for Ion Beam Irradiation
- Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
- ジェミネート再結合過程および初期空間分布に関する研究
- Radiation-Induced Acid Generation Reactions in Chemically Amplified Resists for Electron Beam and X-Ray Lithography
- Study of Radiation-Induced Reactions in Chemically Amplified Resists for Electron Beam and X-Ray Lithography
- Dielectric and Piezoelectric Properties of 0.91Pb(Zn_Nb_)O_3-0.09PbTiO_3/ Polyvinylidene Fluoride Composites Produced by the Sol-Gel Method
- Nonlinear Optical Study of Phase Transition in Lead Magnesium Niobate
- Compositional Dependence of Electrical Properties of Highly (100)-/(001)-Oriented Pb(Zr,Ti)O_3 Thick Films Prepared on Si Substrates by Metalorganic Chemical Vapor Deposition
- Optical Observation of Heterophase and Domain Structures in Relaxor Ferroelectrics Pb(Zn_Nb_)O_3/9% PbTiO_3
- Highly Ordered Icosahedral Quasicrystal of Al-Cu-Fe Alloy Studied by Electron Diffraction and High-Resolution Electron Microscopy : Condensed Matter
- Inclusion Complexation of 4-Biphenylcarboxylate, 4-Biphenylacetate, and 4-Biphenylsulfonate with α-Cyclodextrin, Studied by Pulse Radiolysis
- Determination of Association Constants for Cyclodextrin Inclusion Complexation by Pulse Radiolysis
- Transient Species Induced in X-ray Chemically Amplified Positive Resists:Post-Exposure Delay Effect
- Effects of Impurities on Processes of Acid Generation in Chemically Amplified Resists for Electron Beam and X-Ray Lithography
- Pressure Dependence of Piezoelectric Properties of Pb(Zn_Nb_)O_3-PbTiO_3 Binary System Single Crystal near a Morphotropic Phase Boundary
- Effect-of Electric Fields on Domain Structure and Dielectric Properties of Pb(ln_Nb_)0_3-PbTi0_3 near Morphotropic Phase Boundary
- Crystal Growth and Some Properties of Lead Indium Niobate-Lead Titanate Single Crystals Produced by Solution Bridgman Method
- Crystal Growth and Dielectric Properties of Solid Solutions of Pb(Yb_Nb_)O_3-PbTiO_3 with a High Curie Temperature near a Morphotropic Phase Boundary
- Radical Cation of Dodecamethylcyclohexagermane Generated by Pulse Radiolysis
- Radical Anions of Oligogermanes, Me(Me_2Ge)_nMe(n=2, 3, 5, and 10)Generated by Pulse Radiolysis
- Growth, Electric and Thermal Properties of Lead Scandium Niobate-Lead Magnesium Niobate-Lead Titanate Ternary Single Crystals
- Electroplated Reflection Masks for Soft X-Ray Projection Lithography
- Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
- Symmetry of High-Piezoelectric Pb Based Complex Perovskites at the Morphotropic Phase Boundary : II. Theoretical Treatment
- Symmetry of High-Piezoelectric Pb-Based Complex Perovskites at the Morphotropic Phase Boundary : I. Neutron Diffraction Study on Pb(Zn_Nb_)O_3-9%PbTiO_3
- Dielectric Dispersion in Ferroelectric Li_Na_xGe_4O_9 (x≈1)
- Ferroelectric Phase Transition in Li_Na_xGe_4O_9(x=0.5)
- Structural and Electrical Properties of Polycrystalline Bi_Nd_xTi_3O_ Ferroelectric Thin Films with in-Plane c-Axis Orientations
- Charge-Compensative Ion Substitution of La^-Substituted Bismuth Titanate Thin Films for Enhancement of Remanent Polarization
- Electrical Properties of (Ca,Sr)Bi_4Ti_40_ Thin Films Fabricated Using a Chemical Solution Deposition Method
- Synthesis and Electrical Properties of Sr-and Nb-Cosubstituted Bi_Sr_xTi_NbO_ Polycrystalline Thin Films
- Fabrication of M^-Substituted and M^/V^-Cosubstituted Bismuth Titanate Thin Films [M = lanthanoid] by Chemical Solution Deposition Technique
- Ferroelectric Properties of Al-doped Lead Titanate Zirconate Thin Films Prepared by Chemical Solution Deposition Process
- Preparation of Sputter-deposited Fe-Pd Thin Films
- Preparation of Al-doped PbTiO_3 Thin Films by Metalorganic Chemical Vapor Deposition and Their Characterization
- A New Relaxor Dielectric for High Voltage Multilayer Ceramic Capacitors with Large Capacitance
- Effects of Specific Surface Area of Starting Pre-Calcined Dielectric Powders on Sintering Behavior and Dielectric Properties of Relaxor / Modeified-BaTiO_3 Composite : F: FERROELECTRIC MATERIALS
- A Lead Perovskite Y5U Dielectric for Multilayer Ceramic Capacitor : F: Ferroelectric Materials
- Optical and Structural Studies of Long-Range Order Development in Relaxor Ferroelectrics : Condensed Matter: Electronic Properties, etc.
- Wet-silylation Process for X-ray and EUV Lithographies
- X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect
- Highly Sensitive and Stress-Free Chemically Amplified Negative Working Resist, TDUR-N9, for 0.1 μm Synchrotron Radiation (SR) Lithography
- Reduction of X-Ray Irradiation-Induced Pattern Displacement of SiN Membranes Usirng H^+ Ion Implantation Technique
- X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist
- Preparation of Lead Zirconate Titanate Thick Films by Arc-Discharged Reactive Ion-Plating Method
- Crystal Growth of Pb(In_Nb_)0_3-Pb(Mg_Nb_)0_3-PbTiO_3 and Pb(Sc_Nb_0_3-Pb(Mg_Nb_)03-PbTi0_3 Piezoelectric Single Crystals Using the Solution Bridgman Method
- Growth of Single Crystals of High-Curie-Temperature Pb(In_Nb_)O_3-Pb(Mg_Nb_)O_3-PbTiO_3 Ternary Systems near Morphotropic Phase Boundary
- Large Piezoelectric Constant of High-Curie-Temperature Pb(In_Nb_)O_3-Pb(Mg_Nb_)-PbTiO_3 Ternary Single Crystal near Morphotropic Phase Boundary
- An Improved Phased Array Ultrasonic Probe Using 0.91Pb(Zn_Nb_)O_3-0.09PbTiO_3 Single Crystal
- Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method
- Charge-State and Isotope Effects on the Recovery Process of Stress-Induced Reorientation of Pt-H_2 Complex in Silicon
- Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
- Observation of Long Relaxation from Fe^0(3d^8) to Fe^+(3d^7) by Electron Spin Resonance Measurement
- Stress-Induced Level Shift of a Hydrogen-Carbon Complex in Silicon : Semiconductors
- Optically High Transparent SiN Mask Membrane with Low Stress Deposited by Low Pressure Chemical Vapor Deposition
- Fabrication of X-Ray Mask Using W-CVD for Forming Absorber Pattern : Lithography Technology
- Piezoelectric Properties of a High Curie Temperature Pb(In_Nb_)O_3-PbTiO_3 Binary System Single Crystal near a Morphotropic Phase Boundary
- Temperature Dependence of Piezoelectric Properties of a High Curie Temperature Pb(In_Nb_)O_3-PbTiO_3 Binary System Single Crystal near a Morphotropic Phase Boundary
- Fine Grained Relaxor Dielectric Ceramics Prepared by Hydrothermally Synthesized Powder
- Dielectric and Piezoelectric Properties of 0.93Pb(Zn_Nb_)O_3-0.07PbTiO_3 Piezoelectric Single Crystals for Medical Array Transducers
- Temperature Dependence of Dielectric and Piezoelectric Properties of Pb (Zn_Nb_) O_3-PbTiO_3 Piezoelectric Single Crystals(Electrical Properties of Condensed Matter)
- Effect of Molecular Mass of B-site Ions on Electromechanical Coupling Factors of Lead-Based Perovskite Piezoelectric Materials
- Effects of B-site Ions on the Electromechanical Coupling Factors of Pb(B'B")O_3-PbTiO_3 Piezoelectric Materials
- Phase Stability, Dielectric and Piezoelectric Properties of the Pb(Sc_Nb_)O_3-Pb(Zn_Nb_)O_3-PbTiO_3 Ternary Ceramic Materials
- Dielectric and Piezoelectric Properties of Pb(In_Nb_)O_3-Pb(Mg_Nb_)O_3-PbTiO_3 Ternary Ceramic Materials near the Morphotropic Phase Boundary
- Effect of Pb_(Al_Nb_)O_3 on Structure and Electrical Properties of Lead Titanate Thin Films Prepared by Chemical Solution Deposition Process(Electrical Properties of Condensed Matter)
- Electrical and Physical Properties of Lead Aluminum Niobate-Lead Titanate Ferroelectric Thin Films Prepared by Chemical Solution Deposition Process : Electrical Properties of Condensed Matter
- Optical Properties of Au/SiO_2 Nano-Composite Films Prepared by Induction-Coil-Coupled Plasma Sputtering
- Preparation of Au/SiO_2 Nano-Composite Multilayers by Helicon Plasma Sputtering and Their Optical Properties
- Crystallization Process of TiNi Thin Films Sputtered at Elevated Temperatures on Pt/Si Oxide/Si and Si Oxide/Si Substrates
- Improvement in etch rate uniformity using resistive electrodes with multistep cavity
- Piezoelectric Properties of Polar-Axis-Oriented Ferroelectric Bi_Pr_xTi_3O_ Thick Films
- Ferroelectric and Piezoelectric Properties of Disk Shape Lead Zirconate Titanate Thick Films
- Orientation Behavior and Ferro- and Piezoelectric Properties of Bi_Pr_xTi_3O_ Polycrystalline Films
- Evaluation of Longitudinal Displacement for Lead Zirconate Titanate Films
- Investigation of Etch Rate Uniformity of 60 MHz Plasma Etching Equipment : Nuclear Science, Plasmas, and Electric Discharges
- Distribution of Piezoelectric Properties in Pb[(Mg_Nb_)_Ti_]O_3 Single Crystal : Electrical Properties of Condensed Matter
- Crystal Growth and Electrical Properties of Lead-Free Piezoelectric Material (Na_Bi_)TiO_3-BaTiO_3
- Crystal Growth of Pb[(Zn_Nb_)_0.91Ti_]O_3 Using a Crucible by the Supported Bridgman Method
- Crystal Growth and Mechanical Properties of Pb[(Zn_Nb_)_Ti_]O_3 Single Crystal Produced by Solution Bridgman Method
- Fabrication of texture controlled lead zirconate titanate film actuator
- Simulation and Fabrication Process for a Medical Phased Array Ultrasonic Probe using a 0.91Pb(Zn_Nb_)O_3-0.09PbTiO_3 Single Crystal
- Improved Growth of Large Lead Zinc Niobate Titanate Piezoelectric Single Crystals for Medical Ultrasonic Transducers
- Preparation of Lead Titanate Ultrathin Film Using Langmuir-Blodgett Film as Precursor