YAMASHITA Yohachi | Power Supply Materials and Devices Research Laboratories, Research and Development Center, Toshiba C
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概要
- 同名の論文著者
- Power Supply Materials and Devices Research Laboratories, Research and Development Center, Toshiba Cの論文著者
関連著者
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YAMASHITA Yohachi
Power Supply Materials and Devices Research Laboratories, Research and Development Center, Toshiba C
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Yamashita Yohachi
Power Supply Materials And Devices Laboratory Corporate R&d Center Toshiba Corporation
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Yamashita Yohachi
Power Supply Materials & Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Yamashita Y
Power Supply Materials And Devices Laboratory Corporate R&d Center Toshiba Corporation
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HOSONO Yasuharu
Power Supply Materials and Device Laboratory Corporate R&D Center, Toshiba Corporation
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Yoshida Yoichi
The Institute Of Scientific And Industrial Research Osaka University
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Yamada Yasusada
Advanced Research Institute Waseda University:advanced Science Research Center Japan Atomic Energy R
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Hosono Yasuharu
Power Supply Materials And Devices Laboratories Research And Development Center Toshiba Corporation
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Yamashita Yohachi
Corporate R&d Center Toshiba Corporation
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Yamashita Yohachi
Toshiba Materials & Devices Research Laboratories
著作論文
- Dielectric and Piezoelectric Properties of 0.91Pb(Zn_Nb_)O_3-0.09PbTiO_3/ Polyvinylidene Fluoride Composites Produced by the Sol-Gel Method
- Crystal Growth and Dielectric Properties of Solid Solutions of Pb(Yb_Nb_)O_3-PbTiO_3 with a High Curie Temperature near a Morphotropic Phase Boundary
- Growth, Electric and Thermal Properties of Lead Scandium Niobate-Lead Magnesium Niobate-Lead Titanate Ternary Single Crystals
- Growth of Single Crystals of High-Curie-Temperature Pb(In_Nb_)O_3-Pb(Mg_Nb_)O_3-PbTiO_3 Ternary Systems near Morphotropic Phase Boundary
- Large Piezoelectric Constant of High-Curie-Temperature Pb(In_Nb_)O_3-Pb(Mg_Nb_)-PbTiO_3 Ternary Single Crystal near Morphotropic Phase Boundary
- Piezoelectric Properties of a High Curie Temperature Pb(In_Nb_)O_3-PbTiO_3 Binary System Single Crystal near a Morphotropic Phase Boundary
- Temperature Dependence of Piezoelectric Properties of a High Curie Temperature Pb(In_Nb_)O_3-PbTiO_3 Binary System Single Crystal near a Morphotropic Phase Boundary
- Dielectric and Piezoelectric Properties of 0.93Pb(Zn_Nb_)O_3-0.07PbTiO_3 Piezoelectric Single Crystals for Medical Array Transducers
- Temperature Dependence of Dielectric and Piezoelectric Properties of Pb (Zn_Nb_) O_3-PbTiO_3 Piezoelectric Single Crystals(Electrical Properties of Condensed Matter)
- Effect of Molecular Mass of B-site Ions on Electromechanical Coupling Factors of Lead-Based Perovskite Piezoelectric Materials