Sakamoto H | School Of Science And Engineering Waseda University
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概要
関連著者
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Sakamoto H
School Of Science And Engineering Waseda University
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Yano Koichi
Faculty Of Engineering Gunma University:chiyoda Corporation
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SAKAMOTO Hiroshi
Faculty of Computer Science and Systems Engineering, Kyushu Institute of Technology
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Yano Koji
Department Of Electrical And Electronic Engineering Faculty Of Engineering University Of Yamanashi
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SHIRAISHI Kensuke
Takasaki Radiation Chemistry Research Establishment, Japan Atomic Energy Research Institute
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OTOGURO Yasuo
Faculty of Engineering, Gunma University
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Otoguro Yasuo
Faculty Of Engineering Gunma University
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Shiraishi Kensuke
Takasaki Radiation Chemistry Research Establishment Japan Atomic Energy Research Institute
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Ichinose N
Waseda Univ. Tokyo Jpn
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Ichinose Noboru
School Of Science And Engineering Waseda University
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Hosono Yasuharu
Power Supply Materials And Devices Laboratories Research And Development Center Toshiba Corporation
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Yamashita Y
Power Supply Materials And Devices Laboratory Corporate R&d Center Toshiba Corporation
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SAKAMOTO Hideya
School of Science and Engineering, Waseda University
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Yano K
Department Of Electrical And Electronic Engineering Faculty Of Engineering University Of Yamanashi
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YANO katsuki
The Institute of Physical and Chemical Research
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Shiraishi K
Institute Of Physics Tsukuba University
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Shiraishi K
Japan Atomic Energy Res. Inst. Gunma Jpn
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TSUDA TAKAO
Department of Computer Engineering, Faculty of Information Sciences, Hiroshima City University
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YAMASHITA Yohachi
Power Supply Materials and Devices Research Laboratories, Research and Development Center, Toshiba C
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Tsuda T
Department Of Information Science Kyoto University
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Tsuda Takao
Department Of Anesthesiology Nagoya City University Medical School
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Ichinose Noboru
Toshiba Research Consulting Corporation
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Ichinose Noboru
School Science And Engineering Waseda University
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Ichinose Noboru
School Of Science And Engineering Waseda
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Yoshida Yoichi
The Institute Of Scientific And Industrial Research Osaka University
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HOSONO Yasuharu
Power Supply Materials and Device Laboratory Corporate R&D Center, Toshiba Corporation
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Yamada Yasusada
Advanced Research Institute Waseda University:advanced Science Research Center Japan Atomic Energy R
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Hosono Y
Toshiba Corp. Kawasaki Jpn
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Hosono Yasuharu
Corporate R&d Center Toshiba Corporation
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Yamashita Yohachi
Corporate R&d Center Toshiba Corporation
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Yamashita Yohachi
Toshiba Materials & Devices Research Laboratories
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KITAGAWA Shinya
Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya Institute of
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Yamashita Yoshio
Sortec Corporation:(present Address) Oki Electric Industry Co. Ltd.
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Yamashita Yasuharu
Synthetic Crystal Research Laboratory School Of Engineering Nagoya University
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Yamashita Y
Graduate School Of Natural Science And Technology Okayama University
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OSUGA Toshiaki
Faculty of Science, Chiba University
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SAKAMOTO Hideo
Hyogo Prefectural Institute of Industrial Research
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Osuga T
Faculty Of Science Chiba University
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Osuga Toshiaki
Faculty Of Science Chiba University
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Yamashita Y
Central Research Laboratory Hamamatsu Photonics K.k.
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Kitagawa S
Department Of Applied Chemistry Nagoya Institute Of Technology
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Kitagawa Shinya
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya Institute Of T
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Sakamoto Hideya
School Of Science And Engineering Waseda University
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Kitagawa Shinya
Department Of Applied Chemistry Nagoya Institute Of Technology
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MIMURA Hidenori
Electronics Research Laboratories, Nippon Steel Corporation
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Hosono Yasuharu
Advanced Discrete Semiconductors Technology Laboratory Corporate R&d Center Toshiba Corporation
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Yamashita Yohachi
Advanced Discrete Semiconductors Technology Laboratory Corporate R&d Center Toshiba Corporation
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Yamashita Yohachi
Power Supply Materials And Devices Laboratory Corporate R&d Center Toshiba Corporation
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HASHIGUCHI Gen
Faculty of Engineering, Kagawa University
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Mimura Hidenori
Electronics Research Laboratories Nippon Steel Corporation
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Sakamoto H
School Of Pharmaceutical Sciences Kitasato University
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HASHIGUCHI Gen
Electronics Research Laboratories, Nippon Steel Corporation
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SAKAMOTO Hikaru
Electronics Research Laboratories, Nippon Steel Corporation
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KANAZAWA Satoshi
Electronics Research Laboratories, Nippon Steel Corporation
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Hashiguchi G
Faculty Of Engineering Kagawa University
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Hashiguchi Gen
Electronics Reseach Laboratories Nippon Steel Corporation
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Sakamoto Hikaru
Electronics Research Laboratories Nippon Steel Corporation
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Sakamoto Hitoshi
Advanced Technology Research Center Mitsubishi Heavy Industries Ltd.
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Kanazawa Satoshi
Electronics Research Laboratories Nippon Steel Corporation
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Mimura Hidenori
Electronics Reseach Laboratories Nippon Steel Corporation
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Hirose Fumihiko
Advanced Technology Research Center Mitsubishi Heavy Industries Ltd.
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Yamashita Yoshio
Department Of Physics Tokai University
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Hosono Yasuharu
Advanced Discrete Semiconductor Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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YANO Koichi
Faculty of Engineering, Gunma University:(Present address)Chiyoda Corporation
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MIMURA Hidenori
Electronics R&D Laboratories, Nippon Steel Corporation
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Hosono Yasuharu
Power Supply Materials & Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Yamashita Yohachi
Power Supply Materials & Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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SAKAMOTO Hiroshi
Faculty of Engineering, Gunma University
著作論文
- Infrared Observations of the Interface Electric Cuttent along the Methyl Alcohol-Silica Interface
- Crystal Growth of Pb(In_Nb_)0_3-Pb(Mg_Nb_)0_3-PbTiO_3 and Pb(Sc_Nb_0_3-Pb(Mg_Nb_)03-PbTi0_3 Piezoelectric Single Crystals Using the Solution Bridgman Method
- Growth of Single Crystals of High-Curie-Temperature Pb(In_Nb_)O_3-Pb(Mg_Nb_)O_3-PbTiO_3 Ternary Systems near Morphotropic Phase Boundary
- Large Piezoelectric Constant of High-Curie-Temperature Pb(In_Nb_)O_3-Pb(Mg_Nb_)-PbTiO_3 Ternary Single Crystal near Morphotropic Phase Boundary
- Change in the Electric Current Required to Sustain Steady Electroosmotic Flow in a Capillary
- Wedge-Shaped Silicon Emitter Fabricated by New Method
- Enhancement of the Transport Critical Current Density by Electron Irradiation in a Bi_Pb_Sr_2Ca_2Cu_3O_x Ceramic
- Electron Irradiation Effects on the Transport Critical Current Density in a Bi_Pb_Sr_2Ca_2Cu_3O_x Ceramic
- Gamma Irradiation Effect on the Transport Critical Current Density of a Bi_Pb_Sr_2Ca_2Cu_3O_x Ceramic
- Transport Critical Current Density in a Bi_PbSr_2Ca_2Cu_3O_ Ceramic
- Low-Temperature Si Selective Epitaxial Growth Using Electron-Beam-Induced Reaction