Low-Temperature Si Selective Epitaxial Growth Using Electron-Beam-Induced Reaction
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概要
- 論文の詳細を見る
Low-temperature Si epitaxial growth has been achieved by irradiating electrons and Si_2H_6 molecules simultaneously onto Ge(100) and Si(100) surfaces. The growth takes place exclusively on the electron-irradiated area. The electron stimulation of the surface enables growth rate enhancement and improvement of crystallinity. Si growth is governed by surface reactions induced by electron beam irradiation.
- 社団法人応用物理学会の論文
- 1995-11-15
著者
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Sakamoto H
School Of Science And Engineering Waseda University
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Sakamoto Hitoshi
Advanced Technology Research Center Mitsubishi Heavy Industries Ltd.
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Hirose Fumihiko
Advanced Technology Research Center Mitsubishi Heavy Industries Ltd.
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