Diamond Epitaxial Growth by Gas-Source Molecular Beam Epitaxy with Pure Methane
スポンサーリンク
概要
- 論文の詳細を見る
Diamond epitaxial films with a thickness of 200-350 Å have been successfully grown on C(100) surfaces by gas-source molecular beam epitaxy (GSMBE) with methane without addition of hydrogen or oxygen. The activation energy was measured by a selective growth method using Ta-patterned substrates to be 15 kcal/mol. This value is close to the activation energy of H_2 desorption on C(100), suggesting that the diamond epitaxial growth rate by this GSMBE is limited by hydrogen desorption.
- 社団法人応用物理学会の論文
- 1995-10-01
著者
-
TAKAKUWA Yuji
Research Institute for Scientific Measurements, Tohoku University
-
KONO Shozo
Research Institute for Scientific Measurements, Tohoku University
-
Kono Shozo
Research Institute For Scientific Measurements Tohoku University
-
Takakuwa Yuji
Research Institute For Scientific Measurements Tohoku University
-
Sakamoto Hitoshi
Advanced Technology Research Center Mitsubishi Heavy Industries Ltd.
-
NISHIMORI Toshihiko
Advanced Technology Research Center, Mitsubishi Heavy Industries, Ltd.
-
Nishimori Toshihiko
Advanced Technology Research Center Mitsubishi Heavy Industries Ltd.
関連論文
- RHEED-AES Observation of Sb Desorption on a Single-Domain Si(001)2×1 Surface (第16回表面科学講演大会論文特集2)
- Reflection High Energy Electron Diffraction and Auger Electron Spectroscopy (RHEED-AES) Observation of Bi Desorption from a Single-Domain Si(001)2×1-Bi Surface
- RHEED-AES observation of Bi desorption on a single-domain Si(001)2_x1 surface
- In Situ Observation of Photon-Stimulated Hydrogen Removal on a HF-Passivated Si(111) Surface by Ultraviolet Photoelectron Spectroscopy Using Synchrotron Radiation
- Low-Temperature Cleaning of HF-Passivated Si(111) Surface with VUV Light
- A New Silicon Detector Telescope for Measuring the Linear Energy Transfer Distribution over the Range from 0.2 to 400 keV/μm in Space
- Initial Stage Growth and Electronic Structure of Al Overlayer on a Single-Domain Si(001)2×1 Surface
- Ab Initio Study of Hydrogen Desorption from Diamond C(100) Surfaces
- Photoemission Study of Quasi-Two Dimensional Metal;Ag_2F
- Surface Order Evaluation of the Heteroepitaxial Diamond Film Grown on an Inclined β-SiC(001)
- Critical Thickness for the Solid Phase Epitaxy : Si/Sb/Si(001)
- Diamond Epitaxial Growth by Gas-Source Molecular Beam Epitaxy with Pure Methane
- Two-Dimensional Growth and Decomposition of Initial Thermal SiO_2 Layer on Si(100)
- Outdiffusion and Subsequent Desorption of Volatile SiO Molecules during Annealing of Thick SiO_2 Films in Vacuum
- Low-Temperature Si Selective Epitaxial Growth Using Electron-Beam-Induced Reaction
- Low-Temperature Growth of SiO_2 Films by Electron-Induced Ultrahigh Vacuum Chemical Vapor Deposition
- Metal Chloride Reduction Chemical Vapor Deposition for Ta, Mo and Ir Films
- Photon-Stimulated Desorption of H+ Ions from Oxidized Si(111) Surfaces