Metal Chloride Reduction Chemical Vapor Deposition for Ta, Mo and Ir Films
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概要
- 論文の詳細を見る
Tantalum, molybdenum and iridium thin films are deposited by metal chloride reduction chemical vapor deposition (MCR-CVD) process using Cl2 plasma. In the process, Cl2 plasma, which is generated between a substrate and a metal plate, produces volatile chlorides by chlorination of the metal plate and also acts as a reducing agent. A conformal coverage of the tantalum film on a patterned surface is observed. MCR-CVD using Cl2 plasma is expected to be applied to the deposition of extensive metals, whose chlorides exhibit reasonably high vapor pressures at low temperatures.
- 2004-01-15
著者
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Ogura Yuzuru
Advanced Technology Research Center Mitsubishi Heavy Industries Ltd.
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Sakamoto Hitoshi
Advanced Technology Research Center Mitsubishi Heavy Industries Ltd.
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Yahata Naoki
Advanced Technology Research Center, Mitsubishi Heavy Industries, Ltd., 1-8-1 Sachiura, Kanazawa-ku, Yokohama 236-8515, Japan
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Kobayashi Chikako
HITEC Co., Ltd., 1-8-1 Sachiura, Kanazawa-ku, Yokohama 236-8515, Japan
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Ooba Yoshiyuki
Advanced Technology Research Center, Mitsubishi Heavy Industries, Ltd., 1-8-1 Sachiura, Kanazawa-ku, Yokohama 236-8515, Japan
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Nishimori Toshihiko
Takasago R&D Center, Mitsubishi Heavy Industries, Ltd., 2-1-1 Shin-hama, Arai-cho, Takasago, Hyogo 851-0392, Japan
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Nishimori Toshihiko
Takasago R&D Center, Mitsubishi Heavy Industries, Ltd., 2-1-1 Shin-hama, Arai-cho, Takasago, Hyogo 851-0392, Japan
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Ogura Yuzuru
Advanced Technology Research Center, Mitsubishi Heavy Industries, Ltd., 1-8-1 Sachiura, Kanazawa-ku, Yokohama 236-8515, Japan
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