Low-Temperature Growth of SiO_2 Films by Electron-Induced Ultrahigh Vacuum Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-12-30
著者
-
Nakano Koji
Advanced Research Laboratory Hitachi Ltd.
-
Sakamoto Hitoshi
Advanced Technology Research Center Mitsubishi Heavy Industries Ltd.
-
Horie Tetsuhiro
Advanced Technology Research Center Mitsubishi Heavy Industries Ltd.
-
Nakano Koji
Advanced Technology Research Center Mitsubishi Heavy Industries Ltd.
関連論文
- Fundamental Protocols to Gather Information in Wireless Sensor Networks(Regular Section)
- An Energy-Efficient Initialization Protocol for Wireless Sensor Networks with No Collision Detection
- Energy-Efficient Initialization Protocols for Ad-Hoc Radio Networks
- A Parallel Method for the Prefix Convex Hulls Problem
- Distributed Leader Election on Chordal Ring Networks
- Doubly-Logarithmic Energy-Efficient Initialization Protocols for Single-Hop Radio Networks(Special Section on Discrete Mathematics and Its Applications)
- Diamond Epitaxial Growth by Gas-Source Molecular Beam Epitaxy with Pure Methane
- Low-Temperature Si Selective Epitaxial Growth Using Electron-Beam-Induced Reaction
- Low-Temperature Growth of SiO_2 Films by Electron-Induced Ultrahigh Vacuum Chemical Vapor Deposition
- An Efficient Algorithm for Summing up Binary Values on a Reconfigurable Mesh (Special Section on Discrete Mathematics and Its Applications)
- Metal Chloride Reduction Chemical Vapor Deposition for Ta, Mo and Ir Films