Ferroelectric Properties of Al-doped Lead Titanate Zirconate Thin Films Prepared by Chemical Solution Deposition Process
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-09-30
著者
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Wang Z
Inst. Physics Chinese Acad. Of Sci. Beijing Chn
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Iijima T
Smart Structure Research Center Aist
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Iijima Takashi
Smart Structure Research Center National Institute Of Advanced Industrial Science And Technology (ai
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Iijima Takashi
Materials Engineering Division Tohoku National Industrial Research Institute
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Iijima Takashi
Tohoku National Industrial Research Institute Aist Miti
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HE Gang
Tohoku National Industrial Research Institute, AIST MITI
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WANG Zheng
Tohoku National Industrial Research Institute, AIST MITI
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TSUBOI Hideki
YAMAHA Co, Material & Components Development Center
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HIYAMA Kunio
YAMAHA Co, Material & Components Development Center
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OKADA Masuhiro
YAMAHA Co, Material & Components Development Center
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Okada Masuhiro
Yamaha Co Material & Components Development Center
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Iijima Takashi
Smart Structure Research Center Aist
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Wang Z
Nanyang Technological Univ. Singapore
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He Gang
Materials Engineering Division Tohoku National Industrial Research Institute
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Hiyama Kunio
Yamaha Co Material & Components Development Center
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Tsuboi Hideki
Yamaha Co Material & Components Development Center
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Wang Z
Atmi Inc. Connecticut Usa
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Iijima Takashi
Tohoku National Industrial Research Institute
関連論文
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- Charge-Compensative Ion Substitution of La^-Substituted Bismuth Titanate Thin Films for Enhancement of Remanent Polarization
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- High-T_c Superconducting Active Slot Antenna with a YBCO Step-Edge Josephson Junction Array
- Ferroelectric Properties of Al-doped Lead Titanate Zirconate Thin Films Prepared by Chemical Solution Deposition Process
- Preparation of Sputter-deposited Fe-Pd Thin Films
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- NbN/AlN/NbN Tunnel Junctions Applied as Terahertz SIS Mixers (Special Issue on Basic Properties and Applications of Superconductive Electron Devices)
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