Waveguide-Type SIS Receiver Using All-NbN Technique(<Special Section> Superconducting High-frequency Devices)

概要

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This paper describes the first experimental results for a waveguide-type all-NbN superconductor-insulator-superconductor (SIS) heterodyne mixer on an MgO substrate designed to operate over the gap frequency of Nb. The mixer consists of an NbN/MgO/NbN junction, which has a length of one wavelength at 880GHz as a tuning circuit, an NbN/MgO/NbN microstrip as a λ/4 impedance transformer, and an RF choke filter. The mixer chip was designed using a high-frequency-structure simulator. Its return-loss and embedding-impedance characteristics were examined using a 180-times-scaled mixer model. By optimizing the cutting and polishing processes for the MgO substrate, we were able to fabricate the mixer chip with an accuracy of less than 5μm. We succeeded in mounting the chip on a mixer block and in estimating the receiver noise temperature. The uncorrected minimum double-sideband receiver noise temperature was 740K at 824GHz. A comparison of the receiver noise temperature in a quasi-optical SIS mixer fabricated on the same wafer as the waveguide mixer showed that input noise was the major contributor to receiver noise in the waveguide mixer.
社団法人電子情報通信学会の論文
2006-02-01