Lead Perovskite Relaxor-Based Low-Loss Ceramic Dielectric for High-Voltage Ceramic Capacitors : Ferroelectrics
スポンサーリンク
概要
- 論文の詳細を見る
A low-loss ceramic dielectric with a less than 0.1% dissipation factor at 100 kHz, based on a modified lead zinc niobate relaxor, has been fabricated by shifting the ferroelectric transition temperature (T_c) to below -55℃. This dielectric has a high dielectric constant (K), ranging from 250 to 2000. The temperature coefficient of capacitance (TCC) locates at the middle area between values for temperature compensation dielectric and values for high-K dielectric. Even at 150℃, high insulation resistance, more than 5×10^<13>Ωcm, was also retained. Moreover, a typical composition with K=530 revealed that the dielectric has a high breakdown voltage of 95 kV per 10 mm of thickness and a TCC value of -2900 ppm/℃. Accordingly, this dielectric has proven useful for high-voltage ceramic capacitors.
- 社団法人応用物理学会の論文
- 1991-09-30
著者
-
Yamashita Y
Power Supply Materials And Devices Laboratory Corporate R&d Center Toshiba Corporation
-
Yamashita Yohachi
Toshiba Materials & Devices Research Laboratories
-
FURUKAWA Osamu
Electron Device Engineering Department, Toshiba Corp.
-
Furukawa O
Electron Device Engineering Department Toshiba Corp.
-
Yamashita Y
Central Research Laboratory Hamamatsu Photonics K.k.
-
FURUKAWA Osamu
Research and Development Center, Toshiba Corporation
-
HARATA Mitsuo
Research and Development Center, Toshiba Corporation
-
YAMASHITA Yohachi
Research and Development Center, Toshiba Corporation
-
Harata M
Research And Development Center Toshiba Corporation
関連論文
- Subpicosecond Pulse Radiolysis Study of Geminate Ion Recombination in Liquid Benzene
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (II) : Relation between Resist Space Resolution and Space Distribution of Ionic Species
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (I) : Development of Subpicosecond Pulse Radiolysis and Relation between Space Resolution and Radiation-Induced Reactions
- Pulse Radiolysis Studies on Radiation Damage of DNA
- Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
- Radiation-Induced Acid Generation Reactions in Chemically Amplified Resists for Electron Beam and X-Ray Lithography
- Study of Radiation-Induced Reactions in Chemically Amplified Resists for Electron Beam and X-Ray Lithography
- Nonlinear Optical Study of Phase Transition in Lead Magnesium Niobate
- Optical Observation of Heterophase and Domain Structures in Relaxor Ferroelectrics Pb(Zn_Nb_)O_3/9% PbTiO_3
- Diffuse Optical Tomography using Time-resolved Photon Path Distribution
- Calculation of Photon Path Distribution Based on Photon Behavior Analysis in a Scattering Medium
- Average Value Method:A New Approach to Practical Optical Computed Tomography for a Turbid Medium Such as Human Tissue
- Transient Species Induced in X-ray Chemically Amplified Positive Resists:Post-Exposure Delay Effect
- Effects of Impurities on Processes of Acid Generation in Chemically Amplified Resists for Electron Beam and X-Ray Lithography
- Pressure Dependence of Piezoelectric Properties of Pb(Zn_Nb_)O_3-PbTiO_3 Binary System Single Crystal near a Morphotropic Phase Boundary
- Effect-of Electric Fields on Domain Structure and Dielectric Properties of Pb(ln_Nb_)0_3-PbTi0_3 near Morphotropic Phase Boundary
- Crystal Growth and Some Properties of Lead Indium Niobate-Lead Titanate Single Crystals Produced by Solution Bridgman Method
- Crystal Growth and Dielectric Properties of Solid Solutions of Pb(Yb_Nb_)O_3-PbTiO_3 with a High Curie Temperature near a Morphotropic Phase Boundary
- Growth, Electric and Thermal Properties of Lead Scandium Niobate-Lead Magnesium Niobate-Lead Titanate Ternary Single Crystals
- Electroplated Reflection Masks for Soft X-Ray Projection Lithography
- Resist Performance in 5 nm Soft X-Ray Projection Lithography
- Reduction Imaging at 4.5 nm with Schwarzschild Optics
- Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
- Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
- Symmetry of High-Piezoelectric Pb Based Complex Perovskites at the Morphotropic Phase Boundary : II. Theoretical Treatment
- Symmetry of High-Piezoelectric Pb-Based Complex Perovskites at the Morphotropic Phase Boundary : I. Neutron Diffraction Study on Pb(Zn_Nb_)O_3-9%PbTiO_3
- Dielectric Dispersion in Ferroelectric Li_Na_xGe_4O_9 (x≈1)
- Ferroelectric Phase Transition in Li_Na_xGe_4O_9(x=0.5)
- Relaxor Dielectric Materials for Multilayer Ceramic Capacitor in High-Temperature Applications
- A New Relaxor Dielectric for High Voltage Multilayer Ceramic Capacitors with Large Capacitance
- Effects of Specific Surface Area of Starting Pre-Calcined Dielectric Powders on Sintering Behavior and Dielectric Properties of Relaxor / Modeified-BaTiO_3 Composite : F: FERROELECTRIC MATERIALS
- A Lead Perovskite Y5U Dielectric for Multilayer Ceramic Capacitor : F: Ferroelectric Materials
- Optical and Structural Studies of Long-Range Order Development in Relaxor Ferroelectrics : Condensed Matter: Electronic Properties, etc.
- Wet-silylation Process for X-ray and EUV Lithographies
- X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect
- Highly Sensitive and Stress-Free Chemically Amplified Negative Working Resist, TDUR-N9, for 0.1 μm Synchrotron Radiation (SR) Lithography
- Reduction of X-Ray Irradiation-Induced Pattern Displacement of SiN Membranes Usirng H^+ Ion Implantation Technique
- Ultrahigh-Vacuum Electron Cyclotron Resonance-Plasma Chemical-Vapor-Deposited SiN_x Films for X-Ray Lithography Mask Membrane : As-Deposited Properties and Radiation Stability
- X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist
- Crystal Growth of Pb(In_Nb_)0_3-Pb(Mg_Nb_)0_3-PbTiO_3 and Pb(Sc_Nb_0_3-Pb(Mg_Nb_)03-PbTi0_3 Piezoelectric Single Crystals Using the Solution Bridgman Method
- Growth of Single Crystals of High-Curie-Temperature Pb(In_Nb_)O_3-Pb(Mg_Nb_)O_3-PbTiO_3 Ternary Systems near Morphotropic Phase Boundary
- Large Piezoelectric Constant of High-Curie-Temperature Pb(In_Nb_)O_3-Pb(Mg_Nb_)-PbTiO_3 Ternary Single Crystal near Morphotropic Phase Boundary
- An Improved Phased Array Ultrasonic Probe Using 0.91Pb(Zn_Nb_)O_3-0.09PbTiO_3 Single Crystal
- Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method
- Charge-State and Isotope Effects on the Recovery Process of Stress-Induced Reorientation of Pt-H_2 Complex in Silicon
- Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
- Observation of Long Relaxation from Fe^0(3d^8) to Fe^+(3d^7) by Electron Spin Resonance Measurement
- Stress-Induced Level Shift of a Hydrogen-Carbon Complex in Silicon : Semiconductors
- Quantitation of Absorbers in Turbid Media Using Time-Integrated Spectroscopy Based on Microscopic Beer-Lambert Law
- Simple Subtraction Method for Determining the Mean Path Length Traveled by Photons in Turbid Media
- Improvement in Radiation Stability of SiN X-Ray Mask Membranes
- Optically High Transparent SiN Mask Membrane with Low Stress Deposited by Low Pressure Chemical Vapor Deposition
- Fabrication of X-Ray Mask Using W-CVD for Forming Absorber Pattern : Lithography Technology
- Piezoelectric Properties of a High Curie Temperature Pb(In_Nb_)O_3-PbTiO_3 Binary System Single Crystal near a Morphotropic Phase Boundary
- Temperature Dependence of Piezoelectric Properties of a High Curie Temperature Pb(In_Nb_)O_3-PbTiO_3 Binary System Single Crystal near a Morphotropic Phase Boundary
- Fine Grained Relaxor Dielectric Ceramics Prepared by Hydrothermally Synthesized Powder
- Top-Seeded Solution Growth of Pb[(In_Nb_),(Mg_Nb_),Ti]0_3 Single Crystals
- Fabrication of X-Ray Mask Using W-CVD for Forming Absorber Pattern
- Dielectric and Piezoelectric Properties of 0.93Pb(Zn_Nb_)O_3-0.07PbTiO_3 Piezoelectric Single Crystals for Medical Array Transducers
- Temperature Dependence of Dielectric and Piezoelectric Properties of Pb (Zn_Nb_) O_3-PbTiO_3 Piezoelectric Single Crystals(Electrical Properties of Condensed Matter)
- Effect of Molecular Mass of B-site Ions on Electromechanical Coupling Factors of Lead-Based Perovskite Piezoelectric Materials
- Effects of B-site Ions on the Electromechanical Coupling Factors of Pb(B'B")O_3-PbTiO_3 Piezoelectric Materials
- Phase Stability, Dielectric and Piezoelectric Properties of the Pb(Sc_Nb_)O_3-Pb(Zn_Nb_)O_3-PbTiO_3 Ternary Ceramic Materials
- Effect of Pb_(Al_Nb_)O_3 on Structure and Electrical Properties of Lead Titanate Thin Films Prepared by Chemical Solution Deposition Process(Electrical Properties of Condensed Matter)
- Electrical and Physical Properties of Lead Aluminum Niobate-Lead Titanate Ferroelectric Thin Films Prepared by Chemical Solution Deposition Process : Electrical Properties of Condensed Matter
- Hydrothermal Crystal Growth of Lamthanum-Modified Lead Zirconate Titanate
- Preparation and Properties of Niobium-Doped Pb[(Sc_Nb_)_Ti_]O_3 Ceramics Using Hot Isostatic Pressing
- Distribution of Piezoelectric Properties in Pb[(Mg_Nb_)_Ti_]O_3 Single Crystal : Electrical Properties of Condensed Matter
- Crystal Growth and Electrical Properties of Lead-Free Piezoelectric Material (Na_Bi_)TiO_3-BaTiO_3
- Crystal Growth of Pb[(Zn_Nb_)_0.91Ti_]O_3 Using a Crucible by the Supported Bridgman Method
- Crystal Growth and Mechanical Properties of Pb[(Zn_Nb_)_Ti_]O_3 Single Crystal Produced by Solution Bridgman Method
- Simulation and Fabrication Process for a Medical Phased Array Ultrasonic Probe using a 0.91Pb(Zn_Nb_)O_3-0.09PbTiO_3 Single Crystal
- Improved Growth of Large Lead Zinc Niobate Titanate Piezoelectric Single Crystals for Medical Ultrasonic Transducers
- Medium Voltage Large Capacitance Multilayer Ceramic Capacitors Employing Lead Perovskite Ferroelectric Material : F: Ferroelectric Materials
- Low-Firing Y5P Relaxor Dielectric Material for Multilayer Ceramic Capacitor
- Lead Perovskite Relaxor-Based Low-Loss Ceramic Dielectric for High-Voltage Ceramic Capacitors : Ferroelectrics
- Chemically Amplified Bilevel Resist Based on Condensation of Siloxanes : Resist and Processes
- Chemically Amplified Bilevel Resist Based on Condensation of Siloxanes
- Initial Arthritic Lesions Induced by Immunization with Type II Collagen in Lewis Rats
- Effects of Ytterbium Oxide Nanopowder Particle Size on the Acoustic Properties of Silicone Rubber Lens for Medical Echo Array Probe