Synchrotron Radiation Damage Mechanism of X-Ray Mask Membranes Irradiated in Helium Environment
スポンサーリンク
概要
- 論文の詳細を見る
The mechanism of X-ray mask membrane displacement induced by synchrotrorn radiation (SR) has been discussed. Silicon nitride (SiN) and silicon carbide (SiC) membranes were irradiated by SR in a 1 atm helium ambient. SR-induced displacement for both membranes was 25-97 nm (σ). Oxygen concentration in both SiN and SiC was below 0.01 in O/Si atomic ratio. Although an increase in dangling bond density of SiN was observed, no remarkable increase in spin density was detected in SiC. Moreover, the most important finding was that thin oxides were grown on the membrane surface after SR irradiation. From these results, it is considered that the oxide growth on SiC membrane surfaces, and both the oxide growth and the increase of dangling bond density in SiN play an important role in the SR-induced displacement for the X-ray mask membranes.
- 社団法人応用物理学会の論文
- 1992-12-30
著者
-
Yamaguchi Yoh-ichi
Hoya Corporation
-
OKADA Koichi
SORTEC Corporation
-
ARAKAWA Tomiyuki
SORTEC Corporation
-
Nagasawa Hiroyuki
Hoya Advanced Semiconductor Technologies (hast) Co. Ltd.
-
0KUYAMA Hiroshi
SORTEC Corporation
-
SYOKI Tsutomu
HOYA Corporation
-
Okada Koichi
Sortec Corporation:(present Address) Microelectronics Research Laboratories Nec Corporation
-
Nagasawa Hiroyuki
Hoya Corporation
関連論文
- Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
- Nonlinear Optical Study of Phase Transition in Lead Magnesium Niobate
- Optical Observation of Heterophase and Domain Structures in Relaxor Ferroelectrics Pb(Zn_Nb_)O_3/9% PbTiO_3
- Diffuse Optical Tomography using Time-resolved Photon Path Distribution
- Calculation of Photon Path Distribution Based on Photon Behavior Analysis in a Scattering Medium
- Average Value Method:A New Approach to Practical Optical Computed Tomography for a Turbid Medium Such as Human Tissue
- Transient Species Induced in X-ray Chemically Amplified Positive Resists:Post-Exposure Delay Effect
- Electroplated Reflection Masks for Soft X-Ray Projection Lithography
- Resist Performance in 5 nm Soft X-Ray Projection Lithography
- Reduction Imaging at 4.5 nm with Schwarzschild Optics
- Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
- Control of Emission Wavelength of GaInN Single Quantum Well, Light Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition in a Split-Flow Reactor
- Cubic GaN/AlGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Spectroscopic and Theoretical Studies of Interface States at Ultrathin Oxide/Si Interfaces
- Interface States at Ultrathin Chemical Oxide/Silicon Interfaces Obtained from Measurements of XPS Spectra under Biases
- Interface States for Si-Based MOS Devices with an Ultrathin Oxide Layer : X-Ray Photoelectron Spectroscopic Measurements under Biases
- Relaxor Dielectric Materials for Multilayer Ceramic Capacitor in High-Temperature Applications
- Wet-silylation Process for X-ray and EUV Lithographies
- X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect
- Highly Sensitive and Stress-Free Chemically Amplified Negative Working Resist, TDUR-N9, for 0.1 μm Synchrotron Radiation (SR) Lithography
- Reduction of X-Ray Irradiation-Induced Pattern Displacement of SiN Membranes Usirng H^+ Ion Implantation Technique
- Ultrahigh-Vacuum Electron Cyclotron Resonance-Plasma Chemical-Vapor-Deposited SiN_x Films for X-Ray Lithography Mask Membrane : As-Deposited Properties and Radiation Stability
- X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist
- Effect of Helium Gas Pressure on X-Ray Mask Heating during Synchrotron Radiation Exposure
- Wafer Temperature Measurement and X-Ray Mask Temperature Evaluation in Synchrotron Radiation Lithography
- An Improved Phased Array Ultrasonic Probe Using 0.91Pb(Zn_Nb_)O_3-0.09PbTiO_3 Single Crystal
- Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method
- Charge-State and Isotope Effects on the Recovery Process of Stress-Induced Reorientation of Pt-H_2 Complex in Silicon
- Consideration of Solvent Effect on Precipitation Polymerization of Poly(ether-ketone)s via Friedel-Craft Acylation
- Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
- Observation of Long Relaxation from Fe^0(3d^8) to Fe^+(3d^7) by Electron Spin Resonance Measurement
- Pyroelectric Infrared Sensor Using Modified PbTiO_3 Ceramics
- Polymerization Behavior of Poly(ether ketone) via Friedel-Crafts Acylation Studied by End-Group Analysis with H NMR
- Synthesis of Thermally Cross-Linkable Fluorine-containing Poly(aryl ether ketone)s I. Phenylethynyl Terminated Poly(aryl ether ketone)s
- Stress-Induced Level Shift of a Hydrogen-Carbon Complex in Silicon : Semiconductors
- Synthesis of Novel Fluorine-Containing Poly(aryl ether nitrile)s Derived from 2,3,4,5,6-Pentafluorobenzonitrile
- Isotope Effects on the Dissociation of a Hydrogen-Carbon Complex in Silicon
- Metalorganic Chemical Vapor Deposition Growth of GaN Using a Split-flow Reactor
- Quantitation of Absorbers in Turbid Media Using Time-Integrated Spectroscopy Based on Microscopic Beer-Lambert Law
- Simple Subtraction Method for Determining the Mean Path Length Traveled by Photons in Turbid Media
- Electronically Induced Instability of a Hydrogen-Carbon Complex in Silicon and Its Dissociation Mechanism
- Improvement in Radiation Stability of SiN X-Ray Mask Membranes
- New Method for Observation of Interface States in the Semiconductor Band-Gap : XPS Measurements under Biases(Interfaces by various techniques)
- Direct Spectroscopic Evidence of Bias-Induced Shifts of Semiconductor Band Edges for Metal-Insulator-Semiconductor Diodes
- Piezoelectric Properties of a High Curie Temperature Pb(In_Nb_)O_3-PbTiO_3 Binary System Single Crystal near a Morphotropic Phase Boundary
- Fine Grained Relaxor Dielectric Ceramics Prepared by Hydrothermally Synthesized Powder
- Red thermoluminescence of enstatite from the Chainpur meteorite
- Effects of B-site Ions on the Electromechanical Coupling Factors of Pb(B'B")O_3-PbTiO_3 Piezoelectric Materials
- Phase Stability, Dielectric and Piezoelectric Properties of the Pb(Sc_Nb_)O_3-Pb(Zn_Nb_)O_3-PbTiO_3 Ternary Ceramic Materials
- Crystal Growth of Pb[(Zn_Nb_)_0.91Ti_]O_3 Using a Crucible by the Supported Bridgman Method
- Crystal Growth and Mechanical Properties of Pb[(Zn_Nb_)_Ti_]O_3 Single Crystal Produced by Solution Bridgman Method
- Simulation and Fabrication Process for a Medical Phased Array Ultrasonic Probe using a 0.91Pb(Zn_Nb_)O_3-0.09PbTiO_3 Single Crystal
- Improved Growth of Large Lead Zinc Niobate Titanate Piezoelectric Single Crystals for Medical Ultrasonic Transducers
- Dynamic Oscillation Modes Caused by a Pulsed X-Ray Exposure in an X-Ray Mask Membrane
- Dynamic Oscillation Modes Caused by a PulsedX-Ray Exposure in an X-Ray Mask Membrane : X-Ray Lithography
- Dynamic Thermal Distortions in an X-ray Mask Membrane During Pulsed X-Ray Exposure : Lithography Technology
- Dynamic Thermal Distortions in an X-ray Mask Membrane During Pulsed X-Ray Exposure
- Synchrotron Radiation Damage Mechanism of X-Ray Mask Membranes Irradiated in Helium Environment