Dynamic Oscillation Modes Caused by a Pulsed X-Ray Exposure in an X-Ray Mask Membrane
スポンサーリンク
概要
- 論文の詳細を見る
The dynamic behavior with three oscillation modes caused by pulsed X-ray exposure in an SIN X-ray mask membrane has been predicted by simulation using the weighted residual method. The displacement caused by thermal distortion cannot take place during pulsed X-ray exposure with a 10-ns pulse duration in the three dynamic response modes: damped oscillation, critical damping, and overdamping. The damped oscillation mode with an overshooting effect is caused by an elastic wave effect after a 1-μs time lapse. According to the pulse duration effect, the dynamic behavior is divided into three regions: quasi-static, transient, and saturated regions. For the quasi-static region, the elastic wave effect and three oscillation modes can be neglected. Differences in the dynamic behavior occur in the transient region. In the saturated region, the displacement cannot take place during the pulsed X-ray exposure, due to the elastic wave effect.
- 社団法人応用物理学会の論文
- 1991-11-30
著者
関連論文
- Effect of Helium Gas Pressure on X-Ray Mask Heating during Synchrotron Radiation Exposure
- Wafer Temperature Measurement and X-Ray Mask Temperature Evaluation in Synchrotron Radiation Lithography
- Dynamic Oscillation Modes Caused by a Pulsed X-Ray Exposure in an X-Ray Mask Membrane
- Dynamic Oscillation Modes Caused by a PulsedX-Ray Exposure in an X-Ray Mask Membrane : X-Ray Lithography
- Dynamic Thermal Distortions in an X-ray Mask Membrane During Pulsed X-Ray Exposure : Lithography Technology
- Dynamic Thermal Distortions in an X-ray Mask Membrane During Pulsed X-Ray Exposure
- Synchrotron Radiation Damage Mechanism of X-Ray Mask Membranes Irradiated in Helium Environment