Consideration of Silylation Contrast in an ArF Liquid-Phase Silylation Process
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-12-30
著者
-
Endo Masayuki
Corporate Semiconductor Development Division Matsushita Electric Ind. Co. Ltd.
-
Matsuo T
Assoc. Super‐advanced Electronics Technol. (aset) Kanagawa Jpn
-
MATSUO Takahiro
ULSI Process Technology Development Center, Matsushita Electronics Corporation
-
OHKUNI Mitsuhiro
ULSI Process Technology Development Center, Matsushita Electronics Corporation
-
Matsuo Takahiro
Ulsi Process Technology Development Center Matsushita Electronics Corporation
-
Ohkuni M
Matsushita Electronics Corp. Kyoto Jpn
-
Ohkuni Mitsuhiro
Ulsi Process Technology Development Center Matsushita Electronics Corporation
関連論文
- Advanced Surface Modification Resist Process for ArF Lithography
- Consideration of Silylation Contrast in an ArF Liquid-Phase Silylation Process
- High Performance Etching Process for Organic Films using SO2/O2 Plasma