High Performance Etching Process for Organic Films using SO2/O2 Plasma

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概要

• 論文の詳細を見る

• The anisotropic etching of organic films such as anti reflective coating (ARC) and resist for dry development using inductively coupled plasma (ICP) was studied. In ARC etching, the controllability of critical dimension (CD) and the selectivity to underlayers were investigated for O2 based gas chemistries by adding N2, He, CHF3, Cl2, HBr and SO2. The SO2/O2 chemistry has the advantage of both the CD controllability and the selectivity to underlayers. Field emission Auger electron spectroscopy (FE-AES) analysis revealed that the SO2 gas is useful for sidewall protection due to the sulfur deposition. In dry development etching, the controllability of the etched profile was investigated. It was dicovered that the Vpp (peak to peak voltage of RF bias) increases with increasing SO2 flow ratio to O2 so that a recession occurs in the silylated layer due to high ion energy. A vertical profile was obtained for a 0.13 µm pattern of resist and poly-Si optimizing SO2/O2 gas chemistry.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1998-04-30

著者

• Kubota Masafumi

  Ulsi Process Technology Development Center Matsushita Electronics Corporation

• Matsuo Takahiro

  Ulsi Process Technology Development Center Matsushita Electronics Corporation

• Ohkuni Mitsuhiro

  Ulsi Process Technology Development Center Matsushita Electronics Corporation

• Sasaki Tomoyuki

  Ulsi Process Technology Development Center Matsushita Electronics Corporation

• Kugo Shunsuke

  ULSI Process Technology Development Center, Matsushita Electronics Corporation

• Tateiwa Kenji

  ULSI Process Technology Development Center, Matsushita Electronics Corporation

• Nikoh Hideo

  ULSI Process Technology Development Center, Matsushita Electronics Corporation

• Nikoh Hideo

  Ulsi Process Technology Development Center Matsushita Electronics Corporation

• Kugo Shunsuke

  Ulsi Process Technology Development Center Matsushita Electronics Corporation

関連論文

• Consideration of Silylation Contrast in an ArF Liquid-Phase Silylation Process
• Contact Hole Etch Scaling toward 0.1 μm
• Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO_2 Etching
• Highly Selective SiO2 Etching Using Inductively Coupled Plasma Source with a Multispiral Coil
• High Performance Etching Process for Organic Films using SO2/O2 Plasma
• Transformation of Dense Contact Holes during SiO2 Etching

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