Application of a New BARC Material for 157-nm Lithography

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概要

• 論文の詳細を見る
• Technical Association of Photopolymers, Japanの論文

著者

• Irie S

  Semiconductor Leading Edge Technologies Ibaraki Jpn

• Irie Shigeo

  Semiconductor Leading Edge Technologies Inc. (selete)

• Shigematsu M

  Selete Tsukuba Jpn

関連論文

• Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
• "Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm^2 Static Random Access Memory Contact Layer Fabrication
• Development of Resist Materials for EUVL
• Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
• Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer(Instrumentation, Measurement, and Fabrication Technology)
• 157-nm Single-Layer Resists Based on Main-Chain-Fluorinated Polymers
• Characterization of Fluoropolymer Resist for 157-nm Lithography
• Application of a New BARC Material for 157-nm Lithography
• A study of an Organic Bottom Antireflective Coating for 157-nm Lithography

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