Low-E_a Chemical Amplification Resists for 193nm Lithography

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Low-E_a Chemical Amplification Resists for 193nm Lithography
Properties and Lithographic Capability of Sulfonium Salts with Aromatic Cyclic Ketone Group for ArF Chemically Amplified Resist
Photocrosslinking and Thermal Degradation of Epoxy-containing Polymers Using Photobase Generators
Vacuum Ultraviolet (VUV)-Light-Induced Outgassing from Resist Polymers: A Study Using In Situ Quartz Crystal Microbalance (QCM) Technique
Photocleavage Processes in an Iminosulfonate Derivative Usable as Photoacid in Resist Technology
Visible Light-induced Cationic Polymerization of Epoxides Sensitized by Benzoquinonylsulfanyl Derivatives
Triplet State of O-Acyloximes Studied by Time-Resolved Absorption Spectroscopy
Design and Lithographic Characteristics of Alicyclic Fluoropolymer for ArF Chemically Amplified Resists
Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
Cyclic O-Acyloximes as Novel Photolatent Bases
Photocrosslinking System Using Highly-Functionalized Epoxy Crosslinkers Having Degradable Property
Low-$E_{\text{a}}$ Chemical Amplification Resists for 193 nm Lithography
Synthesis and Properties of Novel i- and g-Line Sensitive Photoacid Generators Based on 9-Fluorenone Derivatives with Aryl-Ethynyl Units
Investigation of Interfaces between Insulator and Active Layer, and between Active Layer and Electrodes in n-Type Organic Field-Effect Transistors
Effect of Hydroxyl Group of Polymer Gate Insulators on Characteristics of Dihexylsexithiophene Organic Field-Effect Transistors Using Poly(p-silsesquioxane) Derivatives

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