Ogata Toshiyuki | Tokyo Ohka Kogyo Co. Ltd.
スポンサーリンク
概要
関連著者
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Ogata Toshiyuki
Tokyo Ohka Kogyo Co. Ltd.
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Kasai Kohei
Tokyo Ohka Kogyo Co. Ltd.
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OKUYA Hiroshi
Center for Advanced Science and Innovation, Osaka University
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FUKUDA Shohei
Center for Advanced Science and Innovation, Osaka University
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Ohmori Yutaka
Center for Advanced Science and Innovation (CASI), Osaka University
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Kajii Hirotake
Center for Advanced Science and Innovation (CASI), Osaka University
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Takahashi Motoki
Tokyo Ohka Kogyo Co., Ltd., 1590 Tabata, Samukawa, Koza, Kanagawa 253-0114, Japan
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FURUYA Sanae
Tokyo Ohka Kogyo Co., Ltd.
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HADA Hideo
Tokyo Ohka Kogyo Co., Ltd.
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SHIRAI Masamitsu
Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University
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Hada Hideo
Tokyo Ohka Kogyo Co. Ltd.
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Furuya Sanae
Tokyo Ohka Kogyo Co. Ltd.
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SAKAKIBARA Akinori
Center for Advanced Science and Innovation, Osaka University
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Shirai Masamitsu
Department Of Applied Chemistry College Of Engineering Osaka Prefecture University
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Fukuda Shohei
Center for Advanced Science and Innovation, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Okuya Hiroshi
Center for Advanced Science and Innovation, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Hada Hideo
Tokyo Ohka Kogyo Co., Ltd., 1590 Tabata, Samukawa, Koza, Kanagawa 253-0114, Japan
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Ogata Toshiyuki
Tokyo Ohka Kogyo Co., Ltd., 1590 Tabata, Samukawa, Koza, Kanagawa 253-0114, Japan
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Furuya Sanae
Tokyo Ohka Kogyo Co., Ltd., 1590 Tabata, Samukawa, Koza, Kanagawa 253-0114, Japan
著作論文
- Low-E_a Chemical Amplification Resists for 193nm Lithography
- Low-$E_{\text{a}}$ Chemical Amplification Resists for 193 nm Lithography
- Investigation of Interfaces between Insulator and Active Layer, and between Active Layer and Electrodes in n-Type Organic Field-Effect Transistors
- Effect of Hydroxyl Group of Polymer Gate Insulators on Characteristics of Dihexylsexithiophene Organic Field-Effect Transistors Using Poly(p-silsesquioxane) Derivatives