Investigation of Interfaces between Insulator and Active Layer, and between Active Layer and Electrodes in n-Type Organic Field-Effect Transistors

概要

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The interface effects of insulator/active layer and active layer/electrode in solution-processed n-type organic field-effect transistors (OFETs) using [6,6]-phenyl C61-butyric acid methyl ester (PCBM) were investigated. Cesium fluoride (CsF) insertion at the active layer/electrode interface induces a large threshold voltage shift, and realizes low-gate-voltage operation. The threshold voltage shift followed by the insertion of CsF is mainly caused by the efficient electron injection due to the coexistence of CsF and a metal electrode. We also investigated the characteristics of OFETs using poly($ p$-silsequioxane) (PSQ) derivatives, which contain various amounts of phenol groups with OH in the side chain of their molecular structures. It is found that the field-effect mobility increases with decreasing phenol group ratio in their side chain. The mobility of the device with PSQ containing a phenol group ratio in a half of the side chain of molecular structures is 0.024 cm2 V-1 s-1, which is twice of that in all side chains.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-02-25