Low-$E_{\text{a}}$ Chemical Amplification Resists for 193 nm Lithography

概要

論文の詳細を見る
The acid-catalyzed deprotection reactions of 193 nm chemical amplification (CA) positive-tone resists were studied by Fourier-transform infrared (FT-IR) spectroscopy. 2-Admantyloxymethyl (AdOM), 1-methyladamantyloxymethyl (MAdOM), 4-oxo-2-admantyloxymethyl (OAdOM) and 2-methyl-2-admantyl (MAd) units as a protecting group of methacryl polymer resists reacted with acid during postexposure bake (PEB) treatment. The activation energies ($E_{\text{a}}$) of these deprotection reactions were calculated from Arrhenius plots of these deprotection reaction rate constants. In the low-PEB-temperature region, the $E_{\text{a}}$ of these resists decreased in the order $\text{MAd}>\text{OAdOM}>\text{AdOM}>\text{MAdOM}$. This order was consistent with the order of the electron densites of methyl acetal carbons in our previous study on 13C-NMR. In addition, the bulky methyl acetal resists had the low $E_{\text{a}}$ values (5.2 to 8.1 kJ/mol) with the conventional PEB temperature region of 110 to 130 °C, whereas that of the MAd resist was 64.8 kJ/mol. Furthermore, AdOM ester was decomposed to 2-hydroxyladamantane during the acid-catalyzed deprotection reaction in the film.
2006-06-30