Design and Lithographic Characteristics of Alicyclic Fluoropolymer for ArF Chemically Amplified Resists
スポンサーリンク
概要
- 論文の詳細を見る
We designed a novel alicyclic fluoropolymer, poly[3-hydroxy-4-(hexafluoro-2-hydroxyisopropyl)tricyclodecene], as an ArF (193 nm) chemically amplified resist. This fluoropolymer has a hexafluoroisopropanol group as an alkaline soluble unit and a hydroxyl group for improving adhesion. This polymer also exhibited a high transparency of 93%/150 nm at 193 nm, high thermal stability (355 °C), and a good adhesion to a Si substrate compared with a poly(norbornene) with a hexafluoroisopropanol group. The etching rate of our developed fluoropolymer for CF4 gas was 1.29 times that of the KrF resist. Moreover, a chemically amplified positive resist comprising an ethoxymethyl-protected polymer and a photoacid generator achieved a 110 nm line-and-space pattern with an ArF exposure.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-12-25
著者
-
Maeda Katsumi
Jisso And Production Technologies Research Laboratories Nec Corporation
-
Nakano Kaichiro
Jisso And Production Technologies Research Laboratories Nec Corporation
-
Shirai Masamitsu
Department Of Applied Chemistry College Of Engineering Osaka Prefecture University
-
Nakano Kaichiro
Jisso and Production Technologies Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
-
Maeda Katsumi
Jisso and Production Technologies Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
関連論文
- ArF Chemically Amplffied Positive Resist Based on Alicyclic Lactone Polymer : Instrumentation, Measurement, and Fabrication Technology
- Thermally Stable Alkylsulfonium Salts for ArF Excimer Laser Resists
- Development of Transparent Alkylsulfonium Salt as a Photoacid Generator for ArF Excimer Laser Lithography(Special Issue on Organic Materials for Optics and Electronics)
- ArF Chemically Amplified Negative Resists Using Alicyclic Epoxy Polymer
- Chemically Amplified Resist Based on High Etch-Resistant Polymers for 193nm Lithography
- Design and Characterization of Alicyclic Polymers with Alkoxy-ethyl Protecting Groups for ArF Chemically Amplified Resists
- Photocrosslinking and Thermal Degradation of Epoxy-containing Polymers Using Photobase Generators
- Photocleavage Processes in an Iminosulfonate Derivative Usable as Photoacid in Resist Technology
- Visible Light-induced Cationic Polymerization of Epoxides Sensitized by Benzoquinonylsulfanyl Derivatives
- Triplet State of O-Acyloximes Studied by Time-Resolved Absorption Spectroscopy
- Design and Lithographic Characteristics of Alicyclic Fluoropolymer for ArF Chemically Amplified Resists
- Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
- Cyclic O-Acyloximes as Novel Photolatent Bases
- Photocrosslinking System Using Highly-Functionalized Epoxy Crosslinkers Having Degradable Property
- Degradable Network Polymers Based on Di(meth)acrylates
- Photocrosslinkable Polymers with Redissolution Property
- Base Generation by the Photolysis of an Amineimide with Triplet-sensitizers and Its Use for an Epoxide/Thiol Curing System
- Low-$E_{\text{a}}$ Chemical Amplification Resists for 193 nm Lithography
- Photoacid and Photobase Generators : Prospects and Their Use in the Development of Polymeric Photosensitive System
- Synthesis and Properties of Novel i- and g-Line Sensitive Photoacid Generators Based on 9-Fluorenone Derivatives with Aryl-Ethynyl Units
- Vacuum Ultraviolet (VUV)-Light-Induced Outgassing from Resist Polymers: A Study Using In Situ Quartz Crystal Microbalance (QCM) Technique
- Design and Lithographic Characteristics of Alicyclic Fluoropolymer for ArF Chemically Amplified Resists
- Properties and Lithographic Capability of Sulfonium Salts with Aromatic Cyclic Ketone Group for ArF Chemically Amplified Resist
- A Reworkable Photothermal Dual-curing System