Effect of Hydroxyl Group of Polymer Gate Insulators on Characteristics of Dihexylsexithiophene Organic Field-Effect Transistors Using Poly(p-silsesquioxane) Derivatives

概要

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The characteristics of p-type organic field-effect transistors (OFETs) based on $\alpha$,$\omega$-dihexylsexithiophene (DH-6T) and fabricated using poly(p-silsequioxane) (PSQ) derivatives, which contained various ratios of a phenol group with a hydroxyl group bonded to a phenyl ring in the side chain of their molecular structures, were investigated. An OFET with a PSQ derivative that contained part of a hydroxyl group in the side chain had a maximum carrier mobility of 0.14 cm2 V-1 s-1. The carrier mobility of OFET with a PSQ derivative that had no hydroxyl group but only a methoxy group in all the side chains, is lower than that with other polymer insulators that had a hydroxyl group in the side chain, owing to the different growth modes of DH-6T grains. The threshold voltage shifted from the + side to the $-$ side as the ratio of the hydroxyl group decreased. The current on/off ratio of OFET increased with decreasing ratio of the hydroxyl group when gate voltage was scanned from 0 to $-30$ V. We demonstrated that the threshold voltage is dependent on the ratio of the hydroxyl group in the polymer gate insulator.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-02-25