FUKUDA Shohei | Center for Advanced Science and Innovation, Osaka University
スポンサーリンク
概要
関連著者
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OKUYA Hiroshi
Center for Advanced Science and Innovation, Osaka University
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FUKUDA Shohei
Center for Advanced Science and Innovation, Osaka University
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Ohmori Yutaka
Center for Advanced Science and Innovation (CASI), Osaka University
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Kajii Hirotake
Center for Advanced Science and Innovation (CASI), Osaka University
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SAKAKIBARA Akinori
Center for Advanced Science and Innovation, Osaka University
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KAJII Hirotake
Center for Advanced Science and Innovation, Osaka University
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OHMORI Yutaka
Center for Advanced Science and Innovation, Osaka University
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Ogata Toshiyuki
Tokyo Ohka Kogyo Co. Ltd.
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Ohmori Yutaka
Center For Advanced Science And Innovation Osaka University
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Ohmori Yutaka
Center For Advanced Science And Technology Osaka University
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Kajii Hirotake
Center For Advanced Science And Innovation Osaka University
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Fukuda Shohei
Center For Advanced Science And Technology Osaka University
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Okuya Hiroshi
Center For Advanced Science And Technology Osaka University
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Kajii Hirotake
Center For Advanced Science And Technology Osaka University
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Sakakibara Akinori
Center For Advanced Science And Technology Osaka University
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Takahashi Motoki
Tokyo Ohka Kogyo Co., Ltd., 1590 Tabata, Samukawa, Koza, Kanagawa 253-0114, Japan
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Fukuda Shohei
Center for Advanced Science and Innovation, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Okuya Hiroshi
Center for Advanced Science and Innovation, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Ogata Toshiyuki
Tokyo Ohka Kogyo Co., Ltd., 1590 Tabata, Samukawa, Koza, Kanagawa 253-0114, Japan
著作論文
- Flexible Organic Field-Effect Transistors Based on the Composites with the Same Thiophene Backbone by Wet Process(Organic Molecular Devices,Towards the Realization of Organic Molecular Electronics)
- Flexible organic field-effect transistors based on the composites with the same backbone by wet process(Organic molecular devices)
- Investigation of Interfaces between Insulator and Active Layer, and between Active Layer and Electrodes in n-Type Organic Field-Effect Transistors
- Effect of Hydroxyl Group of Polymer Gate Insulators on Characteristics of Dihexylsexithiophene Organic Field-Effect Transistors Using Poly(p-silsesquioxane) Derivatives