Study of Transient Electroluminescence Process Using Organic Light-Emitting Diode with Partial Doping Layer

概要

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The transient properties of the organic light-emitting diodes (OLEDs) with a 0.05-nm-thick 4-(dicyanomethylene)-2-i-propyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTI) partial doping layer in different regions of tris(8-hydroxyquinoline) aluminum (Alq3) were examined. For the device with a 0.05-nm-thick DCJTI partial doping layer at the interface between the diamine and Alq3, excitons are confined within the narrow region of the interface. The maximum luminance of more than 30,000 cd/m2 was obtained from all devices. Different transient behaviors between host and guest molecules were found. The transient electroluminescence waveform at 620 nm has an initial overshooting peak compared with that at 520 nm. An OLED with a DCJTI partial doping layer at the interface between the diamine and Alq3 layers shows a higher initial overshooting peak and faster decay time due to the accumulated charges and the narrow emission regions than the OLEDs with a DCJTI partial doping layer in the Alq3 layer.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-04-30