Implantation Induced Order-Disorder Transition in Ga_<0.52>In_<0.48>P/(Al_<0.35>Ga_<0.65>)_<0.5>In_<0.5>P Heterostructures

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The implantation induced transition from the ordered to the disordered state of Ga_<0.52>In_<0.48>P/(Al_<0.35>Ga_<0.65>)_<0.5>In_<0.5>P-layers was investigatod by means of Ar^+ ion implantation, rapid thermal annealing (RTA) and photoluminescence spectroscopy. The implantation dose and annealing temperature dependence of the luminescence was studied in the dose range from 1×10^9 cm^<-2> to 5×10^<13> cm^<-2> and in the temperature range from 500℃ up to 1025℃. By an Ar^+ dose of 2×10^<12> cm^<-2> the temperatture of the order-disorder transition can be decroased by about 200℃ compared to the transition temperature of only annealed samples. For annealing temperatures higher than 700℃ a dose variation by less than one order of magnitude causes an emission energy blue shift of the GaInP luminescence band by about 100 meV due to a complete disordering of the previously ordered layers.
社団法人応用物理学会の論文
1993-10-15