1.3 μm GaInAsN Laserdiodes with improved High Temperature Performance
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概要
- 論文の詳細を見る
We have grown 1.3 μm GaInAsN/GaAs single-quantum-well (SQW) laser structures by solid source molecular beam epitaxy using an RF plasma source for the generation of active nitrogen. For p-type doping Carbon is used. Ridge waveguide lasers show threshold currents of 21 mA and a slope efficiency of 0.52W/A. Device operation up to temperatures of 150℃ (limited by our set-up for temperature variation) is demonstrated. Between 20 and 80℃ we observe for a constant drive current of 90 mA a reduction in output power of less than 2 dB. The threshold current variation with temperature yields a T_o of 158 K for temperatures between 20 and 110℃.
- 社団法人応用物理学会の論文
- 2002-02-28
著者
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Forchel Alfred
Technische Physik Wiirzburg University
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Forchel Alfred
Technische Physik Universitat Wurzburg
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FISCHER Marc
Technische Physik, Wiirzburg University
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GOLLUB Dirk
Nanoplus Nanosystems and Technologies GmbH
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Fischer Marc
Technische Physik Wiirzburg University
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