As-Grown Preparation of Superconducting Epitaxial Ba2YCu3Ox Thin Films Sputtered on Epitaxially Grown ZrO2/Si(100)
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概要
- 論文の詳細を見る
High-$T_{\text{c}}$ superconducting Ba2YCu3Ox thin films have been epitaxially grown on Si(100) substrates with the epitaxially grown tetragonal ZrO2 or cubic yttria-stabilized zirconia (YSZ) as a buffer layer. The thin films were prepared by rf magnetron sputtering of the stoichiometric Ba2YCu3Ox target below 700°C. An adequate positive substrate bias was necessary to ensure surface smoothness and to show the superconducting transition above liquid nitrogen temperature without any post-treatment. The highest $T_{\text{c}}$(onset) and $T_{\text{c}}$(end) observed were 88 K and 84 K, respectively.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-03-20
著者
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Myoren Hiroaki
Department Of Electrical And Electronic Systems Faculty Of Engineering Saitama University
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NISHIYAMA Yukio
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Nasu Hiroyuki
Department Of Chemistry For Materials Faculty Of Engineering Mie University
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Fukumoto Hirofumi
Department Of Electrical Engineering Hiroshima University
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Nasu Hiroyuki
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University, Saijo, Higashi-Hiroshima 724
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