Effect of Low-Molecular-Weight Novolak Resin on Microgrooves

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-11-30

著者

• NAKANO Ryotaro

  Department of Electronics and Bioinformatics, Science and Technology, Meiji University

• Hirose Minoru

  Process Development Division Fujitsu Limited

• Nakano R

  Department Of Electronics And Bioinformatics Science And Technology Meiji University

• Nakano Ritsuko

  Process Development Division Fujitsu Limited

• Shigematsu Koji

  Central Research Laboratory Mitsui Mining & Smelting Co. Ltd.

• Shigematsu K

  Faculty Of Education Iwate University

• Nakagawa K

  Nagaoka Univ. Technol. Nagaoka‐shi Jpn

• Hirose M

  Materials Research Center Tdk Corporation

• SANTOH Nobuaki

  Process Development Division, Fujitsu Limited

• NAKAGAWA Kenji

  Process Development Division, Fujitsu Limited

• SHIGEMATSU Kazumasa

  Semiconductor Process Laboratory, Fujitsu VLSI Limited

• Santoh Nobuaki

  Process Development Division Fujitsu Limited

• Shigematsu K

  Nippondenso Co. Ltd. Aichi

関連論文

• Preparation of Platinum Palladium Monoxide Pt_Pd_xO Thin Films
• Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
• A New Technique of Boron Doping in Si:H Films
• Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
• Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
• Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
• Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
• Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
• Electronic Structure of Photochemically Etched Silicon Surfaces : Surfaces, Interfaces and Films
• Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
• Band Offset in Boron-Doped Amorphous Silicon Heterostructures : Electrical Properties of Condensed Matter
• Determination of Band Discontinuity in Amorphous Silicon Heterojunctions : Electrical Properties of Condensed Matter
• Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
• Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
• Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
• Luminescence from Thermally Oxidized Porous Silicon
• Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
• High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H_2 Plasma Annealing Method
• Amorphous Silicon Static Induction Transistor
• High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
• Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
• Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
• Evaluation of Plasma-Induced Damage by Medium-Energy Ion Scattering
• Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
• Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared Attenuated-Total-Reflection Spectroscopy
• BF^+_2 Ion Implantation into Very-Low-Temperature Si Wafer
• Chemical Stability of HF-Treated Si(111) Surfaces
• The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces
• Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si
• In-Depth Profiling of Suboxide Compositions in the SiO_2/Si Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy
• Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
• Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
• Phonon Interaction in the Luminescence of Porous Silicon
• Reabsorption of Visible Luminescence in Porous Si
• Visible Photoluminescence from Porous Silicon
• Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
• Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
• In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
• Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
• Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
• Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
• Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
• Quantitative Evaluation of Dopant Loss in 5-10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation
• Medium-Energy Ion Spectroscopy Using Ion Implanter
• Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
• Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
• Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
• Pressure Effect on the Crystal Forms of RbCl and RbBr in Aqueous Solution
• Cyclic Crystal Growth and Dissolution in a Closed System
• Refractive Index Ellipsoids of a Polyformal Magneto-Optical Memory Disk Substrate
• Optical Anisotropies in Modified Polycarbonates
• Stress-Optical Coefficients in Polycarbonates
• High-Definition Microscopy of Pressure-Induced NaCl-CsCl Transitiom in RbCl
• Band-Gap Energy Dependence of Emission Spectra in Rare Earth-Doped Zn_Cd_xS Thin Film Electroluminescent Devices
• Several Blue-Emitting Thin-Film Electroluminescent Devices
• Eleetroluminescence of ZnF_2 Thin-Films Doped with Rare-Earth Ions
• Strong Ultraviolet-Emitting ZnF_2:Gd Thin Film Electroluminescent Device
• Atomic Layer Controlled Digital Etching of Silicon : Etching and Deposition Technology
• Atomic Layer Controlled Digital Etching of Silicon
• New Red-Emitting CaY_2S_4:Eu Thin-Film Electroluminescent Devices
• Preparation and Optical Properties of Zirconium-Titanium-Oxide Thin Films by Reactive Sputtering
• Evaluation of Hafnium-Titanium-Oxide Thin Films Prepared by Reactive Sputtering
• Atomic Composition and Structural Properties of Blue Emitting BaAl_2S_4:Eu Electroluminescent Thin Films
• Blue-Emitting BaAl_2S_4:Eu Thin-Film Electroiluminescent Devices Prepared by Two Targets pulse Electron Beam Evaporation(Special Issue on Electronic Displays)
• High-Luminance Blue-Emitting BaAl_2S_4:Eu Thin-Film Electroluminescent Devices
• Transient Behavior in ZnS:TbF_x Thin-Film Electroluminescent Devices Excited by Very Short Pulse
• Magnetic Shield of High-T_c Oxide Superconductors at 77 K
• Broad Band Emission Behaviors an ZnS Thin Film Electroluminescent Devices : Optical Properties of Condensed Matter
• Thickness-Shear Vibration Mode Characteristics of SrBi_4Ti_4O_-Based Ceramics
• Piezoelectric Properties of SrBi_4Ti_4O_-Based Ceramics
• High-Fluidity Deposition of Silicon by Plasma-Enhanced Chermical Vapor Deposition Using Si_2H_6 or SiH_4
• Effect of Low-Molecula-Weight Novolak Resin on Microgrooves : Resist and Processes
• Preparation and Structure of Sr_Ca_CuO_2 Single Crystals
• Precise Mark Shape Control in Mark Length Recording on Magnetooptical Disk
• Read Channel and Format for High-Density Magneto-Optical Disk System
• Effect of Low-Molecular-Weight Novolak Resin on Microgrooves
• Electron Spin Resonance in Sr_Ca_CuO_2
• Postdeposition Annealing Influence on Sputtered Indium Tin Oxide Film Characteristics
• Early Stage of Silicon Oxidation Studied by in situ X-Ray Photoelectron Spectroscopy : Materials and Device Structures with Atomic Scale Resolution(Solid State Devices and Materials 1)
• Internal Photoemission in a-Si:H Schottky-Barrier and MOS Structures : III-2: AMORPHOUS SOLAR CELLS : Characterization
• Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes
• The Importance Sampling Simulation of MMPP/D/1 Queueing

もっと見る 閉じる

スポンサーリンク