Band-Edge Luminescence Degradation by Low Energy Electron Beam Irradiation in GaN Grown by Metal--Organic Vapor Phase Epitaxy in H

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概要

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• The processing and characterization of optical components often requires the use of low energy electron beam (e-beam) techniques, such as scanning electron microscopy or electron beam lithography. The e-beam irradiation has been shown to produce band-edge luminescence degradation in GaN films grown by metal--organic vapor phase epitaxy (MOVPE), down to 20% of the original intensity in both photoluminescnece and cathodoluminescence measurements. The degradation is shown to be strongly related to activation of gallium vacancies in the GaN lattice. In this paper, this effect has been studied with GaN samples grown in two different carrier gases, N<inf>2</inf>and H<inf>2</inf>. The degradation behavior appears almost identical in both cases, implying the vacancy formation to be independent of the carrier gas. Hence, MOVPE GaN electron beam irradiation resistance cannot be improved with the change of the carrier gas.

• 2013-11-25

著者

• Suihkonen Sami

  Department of Micro and Nanosciences, Aalto University, Espoo 02150, Finland

• Svensk Olli

  Department of Micro and Nanosciences, Aalto University, Espoo 02150, Finland

• Suihkonen Sami

  Department of Micro- and Nanosciences, Aalto University, P. O. Box 13500, FI-00076, Finland

• Svensk Olli

  Department of Micro- and Nanosciences, Aalto University, P. O. Box 13500, FI-00076, Finland

• Tuomisto Filip

  Department of Applied Physics, Aalto University, P. O. Box 11100, FI-00076, Finland

• Sopanen Markku

  Department of Micro and Nanosciences, Aalto University, Espoo 02150, Finland

• Nykänen Henri

  Department of Micro- and Nanosciences, Aalto University, P. O. Box 13500, FI-00076, Finland

関連論文

• Inhomogeneous Barrier Height Analysis of (Ni/Au)--InAlGaN/GaN Schottky Barrier Diode
• Analysis of Dislocations Generated during Metal--Organic Vapor Phase Epitaxy of GaN on Patterned Templates
• Band-Edge Luminescence Degradation by Low Energy Electron Beam Irradiation in GaN Grown by Metal--Organic Vapor Phase Epitaxy in H

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