Analysis of Dislocations Generated during Metal--Organic Vapor Phase Epitaxy of GaN on Patterned Templates

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概要

• 論文の詳細を見る

• We report on patterning and subsequent metal--organic vapor phase epitaxy overgrowth of GaN films on patterned GaN/sapphire templates. Templates with a hexagonal hole pattern were prepared by photolithography and dry etching. After GaN overgrowth voids were formed at the GaN/sapphire interface. Threading dislocations were found to bend and terminate at void sidewalls during the overgrowth resulting in improved material quality. The dislocations were analyzed by transmission electron microscopy combined with energy dispersive X-ray spectroscopy. Areas with increased Ga concentration were found at the tips of coalesced voids that introduced additional dislocations to the overgrown films.

• 2013-01-25

著者

• Ali Muhammad

  Department Of Applied Chemistry And Biotechnology Faculty Of Engineering Yamanashi University

• Sopanen Markku

  Department of Micro and Nanosciences, Aalto University, Micronova, PL 13500, 00076 Aalto, Finland

• Lipsanen Harri

  Department of Micro and Nanosciences, Aalto University, Espoo 02150, Finland

• Suihkonen Sami

  Department of Micro and Nanosciences, Aalto University, Espoo 02150, Finland

• Törmä Pekka

  Department of Micro and Nanosciences, Aalto University, Espoo 02150, Finland

• Sintonen Sakari

  Department of Micro and Nanosciences, Aalto University, Espoo 02150, Finland

• Svensk Olli

  Department of Micro and Nanosciences, Aalto University, Espoo 02150, Finland

• Nevedomsky Vladimir

  IOFFE Physical-Technical Institute, St. Petersburg, Russian Federation

• Bert Nikolay

  IOFFE Physical-Technical Institute, St. Petersburg, Russian Federation

• Sopanen Markku

  Department of Micro and Nanosciences, Aalto University, Espoo 02150, Finland

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