First-Principles Study of Atomic and Electronic Structure of Ba/Si(111)(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)

スポンサーリンク

概要

• 論文の詳細を見る

• We report pseudopotential density-functional calculations of the "3×1" phase of the Ba/Si(111) surface. To resolve the coverage issue of the Ba/Si(111) surface, we investigate various structural models with two Ba coverages: 1/3 ML and 1/6 ML. Based on the comparison of the simulated STM images for two coverages and the experimental images, it is found that the "3×1" phase has 1/6 ML Ba and a 3×2 structure with the honeycomb chain-channel Si reconstruction. The substrate reconstruction is quite similar to the Si(111)-3×1 surface induced by 1/3 ML alkali-metals. The experimental semiconducting band gap is well reproduced by the LDA band structure.

• 社団法人日本物理学会の論文
• 2002-11-15

著者

• Koo Ja-yong

  Materials Evaluation Center Korea Research Institute Of Standards And Science

• Hong S

  Sungkyunkwan Univ. Suwon Kor

• HONG Suklyun

  Department of Physics, Sejong University

• KIM Hanchul

  Materials Evaluation Center, Korea Research Institute of Standards and Science

• LEE Geunseop

  Materials Evaluation Center, Korea Research Institute of Standards and Science

• YI Hongsuk

  Supercomputing Center, KISTI

• Lee Geunseop

  Materials Evaluation Center Korea Research Institute Of Standards And Science

• Hong Suklyun

  Department Of Physics Sejong University:center For Nanotubes And Nanostructured Composites. Sungkyun

• Yi Hongsuk

  Supercomputing Center Kisti

• Kim H

  Materials Evaluation Center Korea Research Institute Of Standards And Science

• Hong Suklyun

  Department of Physics and Institute of Fundamental Physics, Sejong University, Seoul 143-747, Korea

関連論文

• Effects of Texturing and Microbridge length on the IR Responsivity of YBa_2Cu_3O_x Thin Film
• An Optomechanical Pressure Sensor Using Multimode Interference Couplers
• First-Principles Study of Atomic and Electronic Structure of Ba/Si(111)(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Memory Operation of InAs Quantum Dot Heterostructure Field Effect Transistor
• Velocity-Mismatching Effect on Extinction Characteristics of Traveling Wave Electroabsorption Modulator
• Optical Binary-Phase-Shift-Keying Modulation of 10 GHz Using an Integrated Hybrid Device
• A Low Voltage Actuated Microelectromechanical Switch for RF Application
• Low Voltage Actuated RF MEMS Switches Using Push-Pull Operation
• Memory Operation of InAs Quantum Dot Field Effect Transistor
• Effects of Etching Time and Thickness on the Performance of the Microstrip Line Resonator of YBa_2Cu_3O_x Thin Films
• An Optomechanical Pressure Sensor Using Multi-Mode Interference Couplers
• Semi-empirical Device and Circuit Models for Ferroelectrics
• Semi-empirical Device and Circuit Models for Ferroelectrics
• Theoretical Comparison of (111) and (100) GaAs/AlGaAs p-Type Quantum Well Infrared Photodetectors
• Superior Detectivity of (111) GaAs/AlGaAs p-Type QW Infrared Photodetector
• Crystal Shape of a Nickel Particle Related to Carbon Nanotube Growth
• Ab initio Investigation of the Early Stage of Nano-scale Thin Film Growth: Al and Co Adatoms on Co (111) Surface
• Structure of Pyrrole on Ge(100)
• Effect of Hydrogen on Carbon Diffusion on Ni(111)

もっと見る 閉じる

スポンサーリンク