Semi-empirical Device and Circuit Models for Ferroelectrics
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概要
- 論文の詳細を見る
Universal model of FerroElectric(FE) polarization switching is presented, which include the effects of time-dependent electric field and arbitrary polarization state. The model can successfully describe the followings with 5 parameters (V_c, V_o, P_s, C_o, T) which have definite physical meanings. These include 1) hysteresis of chage vs. voltage (Q-V) and capacitance vs. voltage (C-V) relation-ships 2) characteristic time dependent polarization reversal(switching) current. To simulate the FE capacitor as a circuit element, the macro(subcircuit) of FE capacitor based on the universal model is implemented into SPICE.
- 社団法人電子情報通信学会の論文
- 1997-07-24
著者
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Hong S
Samsung Electronics Co. Ltd. Kyeonggi‐do Kor
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Hong S
Sungkyunkwan Univ. Suwon Kor
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Lim Kyu-Nam
Dept. of EE, KAIST
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Kim Kyuhyon
Dept. of EE, KAIST
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Hong Songcheol
Dept. of EE, KAIST
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Lee Kywro
Dept. of EE, KAIST
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Kim Kyuhyon
Dept. Of Ee Kaist
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Lee Kywro
Department Of Electrical Engineering And Computer Science(#038) And Inter-university Semiconductor R
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Hong S
Korea Advanced Inst. Of Sci. And Technol. (kaist) Daejeon Kor
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Lim Kyu-nam
Dept. Of Ee Kaist
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