A Large-Signal Model of RF LDMOS with Skin Effects of Power Combining Structures(Session 6B Power Devices,AWAD2006)
スポンサーリンク
概要
- 論文の詳細を見る
An empirical large signal model for RF LDMOS transistors is presented to have good accuracy for all device operating regions up to 20 GHz. Skin effects of combining metal structures, non-reciprocal capacitance, and non-quasi-static effect are considered in this model. A power transistor of 1.92mm gate width is fabricated in an LDMOS technology which is compatible with a 0.3-μm CMOS process. The LDMOS transistor is modeled and compared with measured data. A load-pull measurement results are exactly predicted by the proposed model, which show a P1dB of 20 dBm, a gain of 19 dB, and PAE (power-added-efficiency) of 62% at the P1dB.
- 社団法人電子情報通信学会の論文
- 2006-06-26
著者
-
Hong Songcheol
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
-
Hong Songcheol
Department Of Electrical Engineering And Computer Science (eecs) Korea Advanced Institute Of Science
-
Park Changkun
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
-
HAN Jeonghu
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and T
-
Han Jeonghu
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
関連論文
- An Optomechanical Pressure Sensor Using Multimode Interference Couplers
- Optical Binary-Phase-Shift-Keying Modulation of 10 GHz Using an Integrated Hybrid Device
- Low Voltage Actuated RF MEMS Switches Using Push-Pull Operation
- Memory Operation of InAs Quantum Dot Field Effect Transistor
- An Optomechanical Pressure Sensor Using Multi-Mode Interference Couplers
- Quantum Well Infrared Photodetector with pHEMT structure
- Distribution of Trapped Electron and Hole in Thin SiO_2 Film
- Reduced Dark Current Characteristics of a Norman-Incident In_Ga_As/GaAs QWIP Employing a p-i-n-i-p Camel Diode Structure
- Atomic Force Microscope Probe Tips Using Heavily Boron-Doped Silicon Cantilevers Realized in aBulk Silicon Wafer
- Bias Dependence of Intermodulation Distortion Asymmetry in Heterojunction Bipolar Transistor Using Nonlinear Large-Signal Model
- A Novel Linearization Method of Multiple Quantum Well (MQW) Electroabsorption Analog Modulator
- A Thermal Resistance Measurement of HBT with Pulsed Current I-V Setup and Its Scalability with the Total Emitter Area
- A Large-Signal Model of RF LDMOS with Skin Effects of Power Combining Structures(Session 6B Power Devices,AWAD2006)
- A Large-Signal Model of RF LDMOS with Skin Effects of Power Combining Structures(Session 6B Power Devices,AWAD2006)
- A Low Voltage Actuated Microelectromechanical Switch for RF Application
- Velocity-Mismatching Effect on Extinction Characteristics of Traveling Wave Electroabsorption Modulator
- A Study on Doping Density in InAs/GaAs Quantum Dot Infrared Photodetector
- Memory Operation of InAs Quantum Dot Heterostructure Field Effect Transistor
- Significance of Gate Oxide Thinning below 1.5 nm on $1/ f$ Noise Behavior in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Electrical Stress