Significance of Gate Oxide Thinning below 1.5nm on 1/f Noise Behavior in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Electrical Stress
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-15
著者
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Mheen Bongki
Basic Research Laboratory Electronics And Telecommunications Research Institute (etri)
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HONG Songcheol
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and T
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Song Young-joo
Basic Research Laboratory Electronics And Telecommunications Research Institute (etri)
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KIM Mijin
Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI)
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- Significance of Gate Oxide Thinning below 1.5nm on 1/f Noise Behavior in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Electrical Stress
- Significance of Gate Oxide Thinning below 1.5 nm on $1/ f$ Noise Behavior in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Electrical Stress