Low-frequency noise characteristics of In_<0.52>Al_<0.48>As/In_<0.60>Ga_<0.40>As metamorphic high electron mobility transistors

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Low-frequency noise characteristics of In_<0.52>Al_<0.48>As/In_<0.60>Ga_<0.40>As metamorphic high electron mobility transistors (MM-HEMTs) grown on a GaAs substrate are investigated. Dependence of low-frequency noise spectral density of the MM-HEMT having two 0.5x50μm^2 gates on temperature(200K-400K) and gate and drain bias voltages is characterized for frequencies between 1 Hz to 53 kHz. The low-frequency input noise spectra of the MM-HEMT showed pure 1/f noise characteristics, indicating that there exist no deep trap effects for the temperature and the frequency ranges investigated. The MM-HEMT showed a very low noise spectral density(Hooge parameter: 3.7x10^<-5>frequency exponent:〜1.0)and a very small transconductance frequency dispersion(Δg_m/g_m<3%), which are comparable to the state-of-the-art InAlAs/InGaAs HEMTs grown on InP substrate. The results indicate a great potential of In_<0.52>Al_<0.48>As/In_<0.60>Ga_<0.40>As MM-HEMT grown on GaAs substrate for millimeter-wave circuit applications requiring low phase noise characteristics.
社団法人電子情報通信学会の論文
2001-06-30