Chemical Beam Epitaxy Grown Carbon-Doped Base InP/InGaAs Heterojunction Bipolar Transistor Technology for Millimeter-Wave Applications

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概要

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• Carbon-doped base InP / InGaAs heterojunction bipolar transistor(HBT)technology for millimeter-wave application is presented.Ultra-high carbon doping of InGaAs layers lattice-matched to InP with hole concentrations in excess of 1×10^<20> / cm^3 has been achieved using a chemical beam epitaxy(CBE).Heavily carbon-doped base InP / InGaAs HBT epi structures were grown and small area, self-aligned HBTs with 1.5μm emitter finger width were fabricated using triple mesa etching and polyimide planarization techniques.The fabricated small area transistors showed a common-emitter current gain cut-off frequency(f_T)as high as 200 GHz.Preliminary device reliability test results showed the potential of the heavily carbon-doped base InP / InGaAs HBT for high performance microwave and millimeter-wave applications.Applications of the InP / InGaAs single heterojunction bipolar transistor(SHBT)and double heterojunction bipolar transistor(DHBT)to a direct-coupled feedback amplifier and a power transistor, respectively, are presented.

• 社団法人電子情報通信学会の論文
• 2000-01-25

著者

• Song Jong-in

  Department Of Information And Communications K-jist

• Song J‐i

  Seoul National Univ. Seoul Kor

• SONG Jong-In

  the Department of Information and Communications, Kwangju Institute of Science and Technology(K-JIST

• Song Jong-in

  The Department Of Information And Communications Kwangju Institute Of Science And Technology(k-jist)

関連論文

• Chemical Beam Epitaxy Grown Carbon-Doped Base InP/InGaAs Heterojunction Bipolar Transistor Technology for Millimeter-Wave Applications
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