Effects of Beryllium Doping into InGaAlAs Metamorphic Buffer on High-Electron-Mobility Transistor Structure
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概要
- 論文の詳細を見る
The effects of beryllium (Be) doping into InGaAlAs metamorphic buffer (M-buffer) on the surface morphology, residual strain, and transport property of metamorphic high-electron-mobility transistors (MHEMTs) were investigated. The results of atomic force microscopy, photoluminescence, and Hall measurements indicated improved surface morphology and transport property of MHEMTs due to Be doping in the M-buffer layer, particularly at a high M-buffer growth temperature (450°C). However, the electron mobility degraded at high Be doping concentrations (${\sim}10^{17}$/cm3) due to anomalous out-diffusion of Be into the channel of the MHEMT.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-02-15
著者
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Song Jong-in
Department Of Information And Communications K-jist
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Jo Seong
Department Of Dermatology Seoul National University College Of Medicine
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Lee Dong-Han
Department of Physics, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Song Jong-In
Department of Information and Communications, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Ihn Soo-Ghang
Department of Information and Communications, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Park Jea
Department of Physics, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Jo Seong
Department of Information and Communications, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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