Highly Reflective 1.55 μm In_<1-x-y>Ga_xAl_yAs/In_<1-z>Al_zAs Quaternary Bragg Mirrors Grown by Metalorganic Chennical Vapor Deposition (MOCVD)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-06-15
著者
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Park Hyung-Moo
Semiconductor Div., Electronics and Telecommunications Research Institute
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Park Hyung-moo
Semiconductor Div. Electronics And Telecommunications Research Institute
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Park Hyung-moo
Semiconductors Division Electronics And Telecommunications Research Institute
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CH0I Sung-Woo
Semiconductors Division, Electronics and Telecommunications Research Institute
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Ch0i Sung-woo
Semiconductors Division Electronics And Telecommunications Research Institute
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Choi Sung-Woo
Semiconductors Division, Electronics and Telecommunications Research Institute
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- Highly Reflective 1.55 μm In_Ga_xAl_yAs/In_Al_zAs Quaternary Bragg Mirrors Grown by Metalorganic Chennical Vapor Deposition (MOCVD)